MT47H64M16HR-3:H

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MT47H64M16HR-3:H

IC DRAM 1GBIT PARALLEL 84FBGA

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Spezifikationen

Part Status Obsolete
Base Product Number MT47H64M16
DigiKey Programmable Not Verified
Memory Type Volatile
Memory Format DRAM
Technology SDRAM - DDR2
Memory Size 1Gbit
Memory Organization 64M x 16
Memory Interface Parallel
Clock Frequency 333 MHz
Write Cycle Time - Word, Page 15ns
Voltage - Supply 1.7V ~ 1.9V
Operating Temperature 0°C ~ 85°C (TC)
Mounting Type Surface Mount
Package 84-TFBGA
Supplier Device Package 84-FBGA (8x12.5)
Packaging Tray
Access Time 450 ps

Übersicht

Description

The MT47H64M16HR-3:H is a DRAM (Dynamic Random Access Memory) chip produced by Micron Technology. It features a 64 Meg x 16 bits architecture, which allows for a total capacity of 1 Gigabit (Gb). This memory module operates at a voltage of 1.5V, adhering to the DDR3 SDRAM standards, making it suitable for various applications, including computing and mobile devices.
Key specifications include a maximum clock frequency of 1066 MT/s (megatransfers per second), enhanced data transfer rates, and improved power efficiency. The "-3" suffix indicates a specific speed grade, while the "H" denotes a high-performance variant optimized for low power consumption.
This DRAM is commonly used in consumer electronics, servers, and embedded systems, providing reliable and efficient memory solutions for modern applications. Its design allows for easy integration into memory modules like DIMMs and SO-DIMMs, making it versatile for different usage scenarios.

Features

The MT47H64M16HR-3:H is a DDR3 SDRAM (Synchronous Dynamic Random Access Memory) chip produced by Micron Technology. Here are its key features:
1. Density: 1GB (64Mx16 configuration).
2. Organization: 64M x 16 bits.
3. Package Type: Available in a 78-ball TFBGA (Thin Fine-pitch Ball Grid Array) package.
4. Speed Grades: Supports data rates up to 1066 MT/s (megatransfers per second).
5. Voltage: Operates at a standard voltage of 1.5V.
6. Latency: Offers various CAS latency options, generally optimized for performance.
7. Temperature Range: Designed for standard commercial temperature range.
8. Features: Supports burst lengths of 4 and 8, and includes on-die termination (ODT) for improved signal integrity.
9. Applications: Ideal for mobile devices, laptops, and other consumer electronics requiring compact and efficient memory solutions.
These attributes make it suitable for a range of applications, providing a balance of performance and power efficiency.

Package

The MT47H64M16HR-3:H is packaged in a 78-ball TFBGA (Thin Fine Ball Grid Array) form factor. This package type is designed for high-density memory applications, providing a compact footprint and efficient thermal performance.

Pinout

The MT47H64M16HR-3:H is a DDR3 SDRAM memory chip with a pin count of 78. It is organized as 64 Meg x 16 bits and operates at a voltage of 1.5V. The key functions of the pins include data input/output, address inputs, control signals, and power supply connections.
Key pin functions include:
- DQ0-DQ15: Data input/output lines for data transfer.
- A0-A13: Address inputs for selecting memory locations.
- BA0-BA2: Bank address inputs for bank selection.
- CS#: Chip select for activating the chip.
- RAS#, CAS#, WE#: Control signals for read/write operations.
- CK, CK#: Clock inputs for synchronization.
- VDD/VSS: Power supply and ground connections.
This chip is designed for high-performance memory applications in computing devices.

Manufacturer

The MT47H64M16HR-3:H is manufactured by Micron Technology, Inc. Micron is a leading global provider of advanced semiconductor solutions, specializing in memory and storage technologies. Founded in 1978 and headquartered in Boise, Idaho, Micron designs and produces a variety of products, including DRAM, NAND flash memory, and solid-state drives (SSDs). The company serves various markets, such as computing, mobile, automotive, and industrial applications, and is known for its innovation and commitment to high-quality memory products. Micron's products are widely used in consumer electronics, data centers, and enterprise storage, making it a key player in the semiconductor industry.

Application

The MT47H64M16HR-3:H is a high-density DRAM memory chip used in various applications, including computing systems, networking devices, mobile phones, and consumer electronics. Its features make it suitable for memory-intensive tasks in automotive systems, industrial automation, and telecommunications, where performance and reliability are critical.

Equivalent

The MT47H64M16HR-3:H chip, a DDR3 SDRAM memory chip, has several equivalent products including the Hynix HYMD5G7AFR8C-PB, Samsung K4B4G1646D, and Nanya NT5CB256M16DP-3. These alternatives share similar specifications such as density, organization, and operating voltage. Always verify compatibility based on your specific application requirements.

Versand

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bieten Sie globale Versanddienstleistungen durch DHL, FedEx, TNT, UPS oder einen anderen Spediteur Ihrer Wahl.


Versandgebührenreferenz (DHL/FedEx):

DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.

von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.

Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

Zahlungen

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