MT47H64M8SH-25E:H

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MT47H64M8SH-25E:H

IC DRAM 512MBIT PARALLEL 60FBGA

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Spezifikationen

Part Status Last Time Buy
Base Product Number MT47H64M8
DigiKey Programmable Not Verified
Memory Type Volatile
Memory Format DRAM
Technology SDRAM - DDR2
Memory Size 512Mbit
Memory Organization 64M x 8
Memory Interface Parallel
Clock Frequency 400 MHz
Write Cycle Time - Word, Page 15ns
Voltage - Supply 1.7V ~ 1.9V
Operating Temperature 0°C ~ 85°C (TC)
Mounting Type Surface Mount
Package 60-TFBGA
Supplier Device Package 60-FBGA (8x10)
Packaging Bulk
Access Time 400 ps

Übersicht

Description

The MT47H64M8SH-25E is a DDR3 SDRAM memory chip manufactured by Micron Technology. It features a capacity of 512 megabits (64 megabytes), organized in a configuration of 64 bits x 8 banks. This chip operates at a data rate of 800 MT/s (million transfers per second) and has a clock frequency of 400 MHz.
The "-25E" designation indicates a speed grade, with a maximum access time of 25 nanoseconds. It is designed for applications requiring high bandwidth and low power consumption, making it suitable for various computing and mobile devices. The chip supports a 1.5V power supply, which is standard for DDR3 technology, and is packaged in a compact FBGA (Fine Pitch Ball Grid Array) format, facilitating easy integration into circuit boards.
Overall, the MT47H64M8SH-25E is a reliable component for enhancing memory performance in electronics, particularly in laptops, desktops, and other devices that benefit from increased memory throughput.

Features

The MT47H64M8SH-25E is a DDR3 SDRAM (Synchronous Dynamic Random Access Memory) chip from Micron Technology. Key features include:
1. Capacity: 512 Megabits (64 Megabytes) with a configuration of 8 banks.
2. Data Rate: Supports data rates up to 1066 MT/s (megatransfers per second).
3. Bus Width: 8 bits, making it suitable for various applications requiring low power consumption.
4. Voltage: Operates at a low voltage of 1.5V, enhancing power efficiency.
5. Package: Available in a compact FBGA (Fine Ball Grid Array) package, which aids in space-efficient designs.
6. Latency: Offers a CAS latency of CL=7, 8, or 9, depending on the operating frequency.
7. Temperature Range: Typically rated for industrial applications, supporting a temperature range from -40°C to +95°C (for extended versions).
These features make the MT47H64M8SH-25E suitable for various applications, including consumer electronics, networking, and industrial systems.

Package

The MT47H64M8SH-25E:H is packaged in a 78-ball TFBGA (Thin Fine Pitch Ball Grid Array) form factor. This packaging is designed for efficient thermal performance and space-saving in electronic applications.

Pinout

The MT47H64M8SH-25E:H is a DDR3 SDRAM memory chip with a pin count of 78. It is organized as 8 bits wide and has a density of 512 Meg x 8 bits, which totals 4 Gbits. The primary functions of this chip include data storage and transfer for various applications in computing and electronics, such as servers, desktops, and laptops.
Key features include a memory speed of 800 MT/s and a supply voltage of 1.5V, optimized for performance and power efficiency. The chip is designed for high-speed data transfer, making it suitable for memory-intensive applications. It includes various command and address pins for interfacing with the memory controller, along with power and ground pins essential for operation.

Manufacturer

The manufacturer of the MT47H64M8SH-25E:H is Micron Technology, Inc. Micron is a leading global provider of memory and storage solutions. Established in 1978 and headquartered in Boise, Idaho, the company specializes in semiconductor products, including DRAM, NAND flash memory, and storage solutions for various applications ranging from consumer electronics to enterprise data centers. Micron is known for its innovation and is a key player in the memory market, contributing to advancements in technology across sectors such as computing, mobile, automotive, and more.

Application

The MT47H64M8SH-25E:H is a DDR2 SDRAM memory chip used in various applications, including laptops, desktop computers, networking equipment, consumer electronics, and embedded systems. Its features make it suitable for high-performance tasks such as gaming, graphics processing, and data-intensive applications where fast data access and reliable performance are essential.

Equivalent

The MT47H64M8SH-25E:H chip is a DDR3 SDRAM memory chip. Equivalent products include:
1. Hynix H5TQ2G83AFR
2. Micron MT41K256M16HA
3. Samsung K4B4G1646F
Always verify specifications, such as speed, density, and package type, to ensure compatibility.

Versand

VersandmethodenWir

bieten Sie globale Versanddienstleistungen durch DHL, FedEx, TNT, UPS oder einen anderen Spediteur Ihrer Wahl.


Versandgebührenreferenz (DHL/FedEx):

DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.

von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.

Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

Zahlungen

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