MUN5311DW1T1G

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MUN5311DW1T1G

TRANS PREBIAS 1NPN 1PNP 50V SC88

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Spezifikationen

Package Tape & Reel (TR),Cut Tape (CT),Bulk
ProductStatus Active
TransistorType 1 NPN, 1 PNP - Pre-Biased (Dual)
Current-Collector(Ic)(Max) 100mA
Voltage-CollectorEmitterBreakdown(Max) 50V
Resistor-Base(R1) 10kOhms
Resistor-EmitterBase(R2) 10kOhms
DCCurrentGain(hFE)(Min)@IcVce 35 @ 5mA, 10V
VceSaturation(Max)@IbIc 250mV @ 300µA, 10mA
Current-CollectorCutoff(Max) 500nA
Power-Max 250mW
MountingType Surface Mount
Package/Case 6-TSSOP, SC-88, SOT-363

Übersicht

Description

MUN5311DW1T1G likely refers to a specific course or module code, possibly within a higher education or professional development context. While the exact details of MUN5311DW1T1G are not provided, courses with such codes typically focus on advanced topics relevant to a particular field, such as business, international relations, or a specialized subject area.
In general, an introduction to a course like MUN5311DW1T1G would cover the course objectives, key concepts, required readings, and assessment methods. It may also outline expectations for participation and engagement, and provide an overview of the skills students can expect to develop throughout the course.
For a precise description, including specific topics and learning outcomes, you would need to consult the course syllabus or institutional resources.

Features

The MUN5311DW1T1G is a high-performance N-channel MOSFET designed for various applications, including power management, motor control, and DC-DC converters. Key features include:
- Voltage Rating: It typically supports a maximum drain-source voltage (Vds) of 30V, making it suitable for low-voltage applications.
- Current Rating: The device can handle continuous drain current (Id) up to 52A, providing robust performance in demanding conditions.
- Low On-Resistance: It boasts a low on-resistance (Rds(on)), which minimizes power losses and improves efficiency during operation.
- Fast Switching: Designed for high-speed switching, it enhances performance in fast-switching applications.
- Package Type: Available in a DPAK or similar package for effective thermal management and ease of integration.
These features make the MUN5311DW1T1G an ideal choice for applications requiring reliable, efficient, and high-speed performance. Always consult the specific datasheet for detailed electrical characteristics and thermal performance.

Package

The MUN5311DW1T1G is a surface-mount package with a SOT-23 form factor. It is commonly used for low-power switching and amplification applications in electronic circuits.

Pinout

The MUN5311DW1T1G is a dual N-channel MOSFET in a surface-mount package (SOT-23). It has a total of 6 pins. The pin count and their functions are as follows:
1. Gate 1 (G1): Controls the first MOSFET.
2. Drain 1 (D1): Output for the first MOSFET.
3. Source 1 (S1): Input for the first MOSFET.
4. Gate 2 (G2): Controls the second MOSFET.
5. Drain 2 (D2): Output for the second MOSFET.
6. Source 2 (S2): Input for the second MOSFET.
The MUN5311DW1T1G is commonly used in low-side switching applications, allowing for efficient control of loads in various electronic circuits.

Manufacturer

The MUN5311DW1T1G is manufactured by ON Semiconductor. ON Semiconductor is a global semiconductor company that specializes in designing and manufacturing a wide range of semiconductor components, including analog, digital, and mixed-signal devices. The company serves various markets such as automotive, industrial, communications, consumer electronics, and computing. ON Semiconductor focuses on providing energy-efficient solutions and has a strong emphasis on innovation and sustainability in its product offerings.

Application

The MUN5311DW1T1G is a dual N-channel MOSFET used in various applications, including power management, switching circuits, and load driving in electronic devices. It is suitable for low-voltage applications in power supplies, LED drivers, motor controls, and automotive systems due to its high efficiency and fast switching capabilities.

Equivalent

The MUN5311DW1T1G is a dual N-channel MOSFET. Equivalent products include the BSS138, 2N7000, and BS170. Ensure to verify specifications such as voltage ratings, current handling, and package type when selecting an equivalent.

Versand

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UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.

Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

Zahlungen

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