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NCE30P20Q
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- Fr. Teil #NCE30P20Q
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- Datenblatt NCE30P20Q DataSheet
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Spezifikationen
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package | PDFN3333-8 |
| Operating Temperature | -55℃~+150℃ |
| Current - Continuous Drain(Id) | 20A |
| Pd - Power Dissipation | 35W |
| Drain to Source Voltage | 30V |
| RDS(on) | 15mΩ@10V,15A |
| Gate Threshold Voltage (Vgs(th)@Id) | 1.9V |
| Type | 1 piece P-channel |
| Gate Charge(Qg) | 45.6nC@10V |
| Input Capacitance(Ciss@Vds) | 2.13nF@25V |
| Reverse Transfer Capacitance (Crss@Vds) | 227pF@25V |
Übersicht
Description
The device is housed in a TO-220 package, which facilitates easy heat dissipation and mounting on heat sinks. Its maximum gate-source voltage (V_GS) rating ensures reliable operation within specified limits, preventing potential breakdowns. The NCE30P20Q is also characterized by its robust thermal performance and reliability, which are crucial for long-term operation in demanding environments.
Overall, the NCE30P20Q is an excellent choice for engineers seeking a reliable and efficient solution for power management and control in various electronic designs.
Features
1. Type: P-channel MOSFET.
2. Voltage Rating: Can handle a maximum drain-source voltage (V_DS) of -20V, making it suitable for low-voltage applications.
3. Current Rating: Capable of conducting a continuous drain current (I_D) of up to -30A, allowing it to support high-load conditions.
4. R_DS(on): Low on-resistance, typically around 30mΩ, which minimizes power loss and heat generation during operation.
5. Package: Available in TO-220 or similar packages for effective thermal management.
6. Gate Threshold Voltage: Features a gate threshold voltage (V_GS(th)) suitable for logic-level drive, enabling compatibility with low-voltage control circuits.
7. Fast Switching: Designed for high-speed switching applications, enhancing efficiency in power conversion and management.
These attributes make the NCE30P20Q ideal for use in power supplies, motor drives, and other electronic switching applications.
Package
Pinout
The pin functions are as follows:
1. Gate (G): This is the control terminal for the MOSFET. Applying a negative voltage relative to the source turns the device on, allowing current to flow from the source to the drain.
2. Source (S): This pin is the terminal through which the current enters the MOSFET. For a P-channel device, the source is typically connected to a higher potential.
3. Drain (D): This pin is where the current exits the MOSFET. It connects to the load in a circuit configuration.
This device is rated for a maximum drain-source voltage (V_DS) of 20V and a continuous drain current (I_D) of up to 30A, making it suitable for various switching and amplification tasks in electronic circuits.
Manufacturer
Application
Equivalent
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Zahlungen
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