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NCE40H12K
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- Fr. Teil #NCE40H12K
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- Datenblatt NCE40H12K DataSheet
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Spezifikationen
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package | TO-252-2(DPAK) |
| Operating Temperature | -55℃~+175℃ |
| Current - Continuous Drain(Id) | 120A |
| Pd - Power Dissipation | 120W |
| Drain to Source Voltage | 40V |
| RDS(on) | 4mΩ@10V,20A |
| Gate Threshold Voltage (Vgs(th)@Id) | 2.5V |
| Type | 1 N-channel |
| Gate Charge(Qg) | 75nC@20V |
| Input Capacitance(Ciss@Vds) | 5.4nF@20V |
| Reverse Transfer Capacitance (Crss@Vds) | 380pF |
Übersicht
Description
NCE40H12K's construction includes a rugged semiconductor design that ensures reliability under harsh operating conditions. It is often packaged in a TO-247 or similar housing, facilitating effective heat dissipation. Additionally, the IGBT is compatible with various gate drive circuits, making it versatile for integration into existing systems. Applications include inverters, converters, and other power electronic devices where efficiency and reliability are paramount. Overall, the NCE40H12K represents a robust solution for modern power electronics, addressing the growing demand for energy-efficient technologies.
Features
1. Voltage Rating: It typically has a breakdown voltage of around 1200V, making it suitable for high-voltage applications.
2. Current Rating: Capable of handling continuous drain currents up to 40A, depending on thermal conditions.
3. Low On-Resistance: With an R_DS(on) value usually below 0.2 ohms, it provides efficient switching with reduced power loss.
4. Fast Switching Speed: Optimized for low gate charge, facilitating faster switching, which improves overall efficiency.
5. Thermal Performance: Designed for effective heat dissipation, allowing for reliable performance in demanding environments.
6. Package Options: Available in TO-220 and other packages, offering flexibility for various designs.
Overall, the NCE40H12K is ideal for applications requiring high efficiency and reliable operation in power electronics and automation systems.
Package
Pinout
1. Gate (G) - This pin is used to control the MOSFET. A voltage applied to the gate turns the device on (allowing current to flow from drain to source) or off (preventing current flow).
2. Drain (D) - This is the pin through which the main current flows when the MOSFET is on. It connects to the load.
3. Source (S) - This pin is connected to the ground or the negative side of the power supply. It completes the circuit for the current flowing through the MOSFET.
Always refer to the specific datasheet for detailed electrical characteristics and maximum ratings.
Manufacturer
Application
Equivalent
Versand
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Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.
Zahlungen
Payment Methods
Die Zahlungsfrist ist 100% Prepaid.
Derzeit akzeptieren wir nur die folgenden Zahlungsmethoden:
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3. Überweisung
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