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NCE40P13S
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- Fr. Teil #NCE40P13S
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- Datenblatt NCE40P13S DataSheet
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Spezifikationen
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package | SOP-8 |
| Operating Temperature | -55℃~+150℃ |
| Current - Continuous Drain(Id) | 13A |
| Pd - Power Dissipation | 2.5W |
| Drain to Source Voltage | 40V |
| RDS(on) | 15mΩ@10V |
| Gate Threshold Voltage (Vgs(th)@Id) | 2V |
| Type | 1 piece P-channel |
| Gate Charge(Qg) | 40nC@20V |
| Input Capacitance(Ciss@Vds) | 2.8nF@20V |
| Reverse Transfer Capacitance (Crss@Vds) | 220pF |
Übersicht
Description
This MOSFET is typically packaged in a TO-220 or DPAK configuration, facilitating effective heat dissipation and ease of integration into circuitry. Its gate-source threshold voltage is designed to allow easy driving with common microcontroller or logic-level signals. The device is characterized by robustness, high reliability, and the ability to handle significant thermal and electrical stress.
Key specifications include a maximum drain-source voltage (VDS) of 40V and a continuous drain current (ID) of 13A at proper thermal management. Overall, the NCE40P13S is an excellent choice for designers seeking efficiency and performance in their electronic applications.
Features
1. Low On-Resistance (RDS(on)): Offers low resistance during conduction, improving efficiency and reducing heat generation.
2. High Speed Switching: Suitable for fast switching applications, making it ideal for power management and conversion.
3. High Voltage Rating: Can handle drain-source voltages up to 40V, making it versatile for various circuits.
4. High Current Handling: Capable of withstanding high drain currents, typically up to 40A, allowing it to be used in demanding applications.
5. Package Design: Available in TO-220 and DPAK packages, facilitating easy integration into various electronic designs.
6. Gate Threshold Voltage (VGS(th)): Features a low gate threshold voltage, allowing for easy driving with standard logic levels.
Overall, the NCE40P13S is suitable for applications such as power supplies, motor drivers, and other switching circuits where efficiency and reliability are critical.
Package
Pinout
1. Gate (G): Controls the switching of the MOSFET, allowing it to turn on or off.
2. Drain (D): The terminal through which the drain current flows when the MOSFET is on.
3. Source (S): The terminal connected to the source of current.
The typical pin configuration is as follows:
- Pin 1: Gate
- Pin 2: Drain
- Pin 3: Source
- Pin 4: Source
- Pin 5: Drain
- Pin 6: Gate
The NCE40P13S is commonly used in power management applications due to its low on-resistance and high-speed switching capabilities. It is designed for efficient performance in various electronic devices.
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Application
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Zahlungen
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