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NCP51820AMNTWG
IC GATE DRVR HALF-BRIDGE HI SPD
- Hersteller
- Fr. Teil #NCP51820AMNTWG
- Paket 15-VFQFN
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Spezifikationen
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| DrivenConfiguration | Half-Bridge |
| ChannelType | Independent |
| GateType | N-Channel, P-Channel MOSFET |
| Voltage-Supply | 9V ~ 17V |
| Current-PeakOutput(SourceSink) | 1A, 2A |
| InputType | Non-Inverting |
| HighSideVoltage-Max(Bootstrap) | 670 V |
| Rise/FallTime(Typ) | 2ns, 1.5ns |
| OperatingTemperature | 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 15-VFQFN |
Übersicht
Description
Key features of the NCP51820AMNTWG include a high switching frequency, low propagation delay, and the ability to provide high peak currents to rapidly turn on and off GaN transistors. The device also includes protection features like under-voltage lockout (UVLO) to ensure reliable operation.
The small package size of the NCP51820AMNTWG allows for compact designs, making it ideal for systems requiring high power density and efficiency, such as power adapters, electric vehicle chargers, and renewable energy applications. Its ability to enhance efficiency and reduce power losses makes it a valuable component in modern power electronics.
Features
1. High-Speed Performance: It offers fast switching speeds essential for high-frequency applications, maximizing the efficiency of GaN transistors.
2. Low Propagation Delay: The driver features low propagation delay, enhancing the overall system responsiveness and performance.
3. Gate Drive Voltage: It provides a gate drive voltage of typically 5V, suitable for driving GaN transistors efficiently.
4. Wide Operating Range: It supports a wide input voltage range, providing flexibility in various power systems.
5. Undervoltage Lockout (UVLO): The device includes UVLO protection to prevent operation under insufficient voltage levels, which can protect the GaN transistor.
6. Compact Package: The NCP51820AMNTWG comes in a compact package, making it suitable for space-constrained applications.
These features make the NCP51820AMNTWG ideal for applications like DC-DC converters, motor drives, and other high-frequency power electronics systems requiring efficient and reliable GaN transistor operation.
Package
Pinout
1. VDD: Supply voltage for the driver.
2. GND: Ground reference for the device.
3. IN+: Non-inverting input for the driver.
4. IN-: Inverting input for the driver.
5. OUT: Output pin that connects to the gate of the GaN FET.
6. PGND: Power ground, often connected internally to the GND.
7. NC (No Connect): Typically left unconnected or used for debugging or other internal purposes, depending on the specific design variant.
8. VDRV: Driver voltage, which is used to supply power to the gate drive circuitry.
Please refer to the specific datasheet of the NCP51820AMNTWG for more detailed and precise information about its pins and functional description.
Manufacturer
Application
Equivalent
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Zahlungen
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