NCP51820AMNTWG

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NCP51820AMNTWG

IC GATE DRVR HALF-BRIDGE HI SPD

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  • Fr. Teil #NCP51820AMNTWG
  • Paket 15-VFQFN
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Spezifikationen

Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Active
DrivenConfiguration Half-Bridge
ChannelType Independent
GateType N-Channel, P-Channel MOSFET
Voltage-Supply 9V ~ 17V
Current-PeakOutput(SourceSink) 1A, 2A
InputType Non-Inverting
HighSideVoltage-Max(Bootstrap) 670 V
Rise/FallTime(Typ) 2ns, 1.5ns
OperatingTemperature 150°C (TJ)
MountingType Surface Mount
Package/Case 15-VFQFN

Übersicht

Description

The NCP51820AMNTWG is a gate driver IC designed to control the gates of high-side and low-side MOSFETs in various power applications. Manufactured by ON Semiconductor, this device is specifically tailored for driving GaN (Gallium Nitride) power transistors, which are known for their efficiency and high-speed switching capabilities. The NCP51820AMNTWG supports input voltages typically up to 200V, making it suitable for high-voltage applications.
Key features of the NCP51820AMNTWG include a high switching frequency, low propagation delay, and the ability to provide high peak currents to rapidly turn on and off GaN transistors. The device also includes protection features like under-voltage lockout (UVLO) to ensure reliable operation.
The small package size of the NCP51820AMNTWG allows for compact designs, making it ideal for systems requiring high power density and efficiency, such as power adapters, electric vehicle chargers, and renewable energy applications. Its ability to enhance efficiency and reduce power losses makes it a valuable component in modern power electronics.

Features

The NCP51820AMNTWG is a high-performance, high-speed gate driver designed for use with enhancement-mode Gallium Nitride (GaN) power transistors. Key features include:
1. High-Speed Performance: It offers fast switching speeds essential for high-frequency applications, maximizing the efficiency of GaN transistors.
2. Low Propagation Delay: The driver features low propagation delay, enhancing the overall system responsiveness and performance.
3. Gate Drive Voltage: It provides a gate drive voltage of typically 5V, suitable for driving GaN transistors efficiently.
4. Wide Operating Range: It supports a wide input voltage range, providing flexibility in various power systems.
5. Undervoltage Lockout (UVLO): The device includes UVLO protection to prevent operation under insufficient voltage levels, which can protect the GaN transistor.
6. Compact Package: The NCP51820AMNTWG comes in a compact package, making it suitable for space-constrained applications.
These features make the NCP51820AMNTWG ideal for applications like DC-DC converters, motor drives, and other high-frequency power electronics systems requiring efficient and reliable GaN transistor operation.

Package

The NCP51820AMNTWG is a gate driver IC typically packaged in a WDFN (Wafer-Level Chip-Scale Package) with dimensions that are compact for surface-mount technology, enabling efficient heat dissipation and a small footprint for high-density applications.

Pinout

The NCP51820AMNTWG is a high-speed gate driver designed for driving GaN (Gallium Nitride) FETs. It typically comes in a small package with a pin count of 8. Here’s a brief overview of its pin functions:
1. VDD: Supply voltage for the driver.
2. GND: Ground reference for the device.
3. IN+: Non-inverting input for the driver.
4. IN-: Inverting input for the driver.
5. OUT: Output pin that connects to the gate of the GaN FET.
6. PGND: Power ground, often connected internally to the GND.
7. NC (No Connect): Typically left unconnected or used for debugging or other internal purposes, depending on the specific design variant.
8. VDRV: Driver voltage, which is used to supply power to the gate drive circuitry.
Please refer to the specific datasheet of the NCP51820AMNTWG for more detailed and precise information about its pins and functional description.

Manufacturer

The NCP51820AMNTWG is manufactured by ON Semiconductor, a company known for producing a broad range of semiconductor components. ON Semiconductor specializes in power and signal management, logic, discrete, and custom devices for various sectors, including automotive, communications, computing, consumer electronics, industrial, LED lighting, medical, military/aerospace, and power applications. The company focuses on energy-efficient innovations and solutions that help reduce global energy use, aligning with industry trends towards more sustainable technology.

Application

The NCP51820AMNTWG is primarily used in applications requiring high-speed, high-power gate driving, such as motor drives, power supplies, and power inverters. It is suitable for driving GaN (Gallium Nitride) power transistors, which are increasingly used in efficient power conversion systems due to their fast switching capabilities and efficiency benefits. This gate driver is employed in areas like renewable energy systems, electric vehicles, industrial automation, and consumer electronics to enhance the performance and efficiency of power management solutions.

Equivalent

The NCP51820AMNTWG is a high-speed, half-bridge gate driver. Equivalent products from other manufacturers might include the UCC21520 from Texas Instruments, the FAN7191 from ON Semiconductor, and the ADuM3223 from Analog Devices. These alternatives offer similar functionality with differences in specifications such as output current, propagation delay, and operating voltage ranges, so it’s recommended to compare the datasheets to ensure compatibility with your specific application requirements.

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Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

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