NGTB25N120FL2WG

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NGTB25N120FL2WG

IGBT FIELD STOP 1200V 50A TO247

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  • Fr. Teil #NGTB25N120FL2WG
  • Paket TO-247-3
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Spezifikationen

Package Bulk,Tube
ProductStatus Active
IGBTType Field Stop
Voltage-CollectorEmitterBreakdown(Max) 1200 V
Current-Collector(Ic)(Max) 50 A
Current-CollectorPulsed(Icm) 100 A
Vce(on)(Max)@VgeIc 2.4V @ 15V, 25A
Power-Max 385 W
SwitchingEnergy 1.95mJ (on), 600µJ (off)
InputType Standard
GateCharge 178 nC
Td(on/off)@25°C 87ns/179ns
TestCondition 600V, 25A, 10Ohm, 15V
ReverseRecoveryTime(trr) 154 ns
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
Package/Case TO-247-3

Übersicht

Description

The NGTB25N120FL2WG is a high-voltage, N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for use in power applications. With a maximum voltage rating of 1200V and a current handling capability of 25A, it is suitable for various switching and amplification tasks in power electronics.
This MOSFET features a low on-resistance and fast switching characteristics, making it efficient for applications such as power supplies, motor drives, and renewable energy systems. Its robust construction allows for reliable operation in high-temperature environments.
The device is typically housed in a TO-247 package, which facilitates effective thermal management and easy mounting on PCBs. The NGTB25N120FL2WG is ideal for applications requiring high efficiency and reliability, including inverters, converters, and electric vehicles. Overall, it is a versatile component for engineers looking to enhance the performance of their power management systems.

Features

The NGTB25N120FL2WG is a high-performance insulated gate bipolar transistor (IGBT) designed for power conversion applications. Key features include:
1. Voltage Rating: 1200V, making it suitable for high-voltage applications.
2. Current Rating: 25A continuous collector current, allowing efficient power handling.
3. Low Saturation Voltage: Reduces power losses during operation, enhancing efficiency.
4. Fast Switching Speed: Optimized for rapid switching applications, reducing switching losses.
5. Thermal Stability: Good thermal management capabilities ensure reliable operation in demanding environments.
6. Package Type: Comes in a TO-247 package, facilitating easy thermal dissipation and assembly.
7. Rugged Design: Built to withstand harsh conditions and provide longevity in various applications.
These features make the NGTB25N120FL2WG ideal for use in inverter systems, motor drives, and other industrial applications requiring reliable power switching.

Package

The NGTB25N120FL2WG is packaged in an NTC (N-channel, TO-247) format, which is a type of power transistor package designed for high voltage and high current applications. This form factor provides efficient heat dissipation and ease of mounting in various electronic applications.

Pinout

The NGTB25N120FL2WG is a 1200V, 25A N-channel IGBT (Insulated Gate Bipolar Transistor) designed for high-efficiency switching applications. It typically comes in a TO-247 package with three pins.
Pin Count and Functions:
1. Gate (G): This pin is used to control the switching of the IGBT. A voltage applied to the gate allows the device to turn on and conduct current.
2. Collector (C): This pin connects to the load and provides the path for the output current when the device is turned on.
3. Emitter (E): This pin connects to the ground or negative supply and serves as the return path for the current.
The NGTB25N120FL2WG is commonly used in applications such as inverters, motor drives, and power conversion systems due to its ability to handle high voltage and current while offering efficient performance.

Manufacturer

The NGTB25N120FL2WG is manufactured by ON Semiconductor, a global company specializing in semiconductor solutions. ON Semiconductor designs, manufactures, and markets a wide range of components, including power management devices, sensors, and connectivity products, serving various industries such as automotive, industrial, and consumer electronics. The company focuses on energy-efficient solutions and is recognized for its innovation in the semiconductor sector.

Application

The NGTB25N120FL2WG is a 1200V, 25A IGBT (Insulated Gate Bipolar Transistor) primarily used in high-power applications such as motor drives, industrial inverters, and renewable energy systems (like solar inverters). Its fast switching capabilities make it suitable for applications requiring efficient power conversion and management, including UPS systems and traction drives in electric vehicles.

Equivalent

The NGTB25N120FL2WG is a 1200V, 25A IGBT module. Equivalent products include the Infineon FF120R12KT4, Mitsubishi MG100J2YS3, and ON Semiconductor NGTB25N120FL2WG (same part number). Always verify specifications and application compatibility when considering alternatives.

Versand

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Versandgebührenreferenz (DHL/FedEx):

DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.

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UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.

Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

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