NSR0320MW2T1G

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NSR0320MW2T1G

DIODE SCHOTTKY 20V 1A SOD323

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  • Fr. Teil #NSR0320MW2T1G
  • Paket SOD-323
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Spezifikationen

Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Active
DiodeType Schottky
Voltage-DCReverse(Vr)(Max) 20 V
Current-AverageRectified(Io) 1A (DC)
Voltage-Forward(Vf)(Max)@If 500 mV @ 900 mA
Speed Fast Recovery =< 500ns, > 200mA (Io)
Current-ReverseLeakage@Vr 50 µA @ 15 V
Capacitance@VrF 29pF @ 5V, 1MHz
MountingType Surface Mount
Package/Case SC-76, SOD-323
SupplierDevicePackage SOD-323

Übersicht

Description

The NSR0320MW2T1G is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. It is designed for low-voltage applications, featuring a maximum drain-source voltage (V_DS) of 30V and a continuous drain current (I_D) of up to 20A. The device is optimized for high-speed switching and low on-resistance, making it suitable for power management applications such as DC-DC converters, power supplies, and motor control systems.
The MOSFET comes in a compact surface-mount package (SOT-23), facilitating easy integration into space-constrained designs. Its low gate threshold voltage allows for efficient operation with low drive voltages. The NSR0320MW2T1G is also characterized by fast switching speeds, which contribute to improved efficiency in power applications. Overall, it is a versatile component ideal for modern electronic designs requiring reliable and efficient power switching.

Features

The NSR0320MW2T1G is a dual N-channel MOSFET designed for efficient switching applications. Key features include:
- Voltage Rating: 30V maximum drain-source voltage (V_DS).
- Continuous Drain Current: Up to 20A, suitable for high-current applications.
- R_DS(on): Low on-resistance (typically around 0.015 Ohms at V_GS = 10V), which minimizes conduction losses.
- Gate Threshold Voltage: Gate-source threshold voltage (V_GS(th)) of 1V to 2.5V, allowing for easy drive from low-voltage logic levels.
- Package: Available in a compact 8-lead SOIC-8 package, facilitating space-saving designs.
- Fast Switching Speed: Suitable for high-frequency applications due to rapid switching capabilities.
- Thermal Resistance: Good thermal performance, which helps in managing heat dissipation.
- Applications: Commonly used in power management, DC-DC converters, motor drives, and other switching applications.
These features make the NSR0320MW2T1G an effective choice for modern electronic designs requiring robust performance and efficiency.

Package

The NSR0320MW2T1G is packaged in a SOT-23-3 form factor.

Pinout

The NSR0320MW2T1G is a N-channel MOSFET manufactured by ON Semiconductor. It features a package with a total of 8 pins. The primary functions of the NSR0320MW2T1G include switching and amplification in electronic circuits, suitable for applications such as power management, load switching, and signal amplification.
Key specifications include a maximum drain-source voltage (V_DS) of 30V, a maximum continuous drain current (I_D) of 20A, and a low gate threshold voltage (V_GS(th)) ranging from 1V to 2.5V. The device is designed for low on-resistance (R_DS(on)), ensuring efficient performance in various applications.
For detailed information, referring to the manufacturer's datasheet is recommended for electrical characteristics and application guidelines.

Manufacturer

The NSR0320MW2T1G is manufactured by ON Semiconductor Corporation, a multinational company that specializes in semiconductor solutions. ON Semiconductor designs and manufactures a wide range of products, including power management, analog, sensors, and discrete devices, which are used in various applications such as automotive, industrial, and consumer electronics. The company focuses on enabling energy-efficient solutions and is known for its commitment to sustainability and innovation in the semiconductor industry.

Application

The NSR0320MW2T1G is a low-voltage N-channel MOSFET primarily used in power management applications. Its key application areas include DC-DC converters, load switching, motor control, and high-frequency switching circuits. It is suitable for portable devices, computing systems, and consumer electronics where efficient power management and space-saving designs are essential.

Equivalent

The NSR0320MW2T1G is a N-channel MOSFET. Equivalent products include the BSS138, 2N7000, and BS170 for similar specifications. For higher current applications, consider the IRLZ44N or AOD4184. Always verify the specifications, such as voltage, current ratings, and package type, to ensure compatibility for your specific application.

Versand

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Versandgebührenreferenz (DHL/FedEx):

DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.

von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.

Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

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