NSS12201LT1G

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NSS12201LT1G

TRANS NPN 12V 2A SOT23-3

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  • Fr. Teil #NSS12201LT1G
  • Paket SOT23-3
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Spezifikationen

Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Active
TransistorType NPN
Current-Collector(Ic)(Max) 2 A
Voltage-CollectorEmitterBreakdown(Max) 12 V
VceSaturation(Max)@IbIc 90mV @ 200mA, 2A
Current-CollectorCutoff(Max) 100nA (ICBO)
DCCurrentGain(hFE)(Min)@IcVce 200 @ 500mA, 2V
Power-Max 460 mW
Frequency-Transition 150MHz
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case TO-236-3, SC-59, SOT-23-3

Übersicht

Description

NSS12201LT1G is a part number for a specific type of semiconductor device, typically a silicon N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). These components are widely used in electronic circuits for switching and amplification purposes.
Key features often associated with this part include its on-resistance, voltage rating, current capacity, and switching speed, making it suitable for applications in power management, motor control, and signal amplification.
Datasheets provide detailed specifications, including electrical characteristics, thermal performance, and recommended operating conditions, which are crucial for designers to effectively integrate the device into their applications.
For accurate and specific information, consult the manufacturer's datasheet or technical resources related to NSS12201LT1G.

Features

The NSS12201LT1G is a low-voltage, dual N-channel MOSFET designed for various applications, including power management and switching. Key features include:
1. Low On-Resistance: Provides efficient performance with minimal power loss.
2. Low Gate Threshold Voltage: Enables operation with low drive voltages, enhancing compatibility with various systems.
3. Fast Switching Speed: Facilitates high-frequency applications, improving efficiency in switch-mode power supplies.
4. High Drain-Source Voltage: Supports a wide voltage range, making it suitable for various applications.
5. Small Package Size: Housed in a compact SOT-23 package, allowing for space-saving designs.
6. RoHS Compliant: Environmentally friendly, adhering to safety and regulatory standards.
These features make the NSS12201LT1G ideal for use in power management circuits, DC-DC converters, and battery-operated devices.

Package

The NSS12201LT1G is packaged in a SOT-223 form factor. This surface-mount package is commonly used for its compact size and thermal efficiency in semiconductor applications.

Pinout

The NSS12201LT1G is a dual N-channel MOSFET in a surface-mount package. It has a pin count of 8. The primary functions of this device include switching and amplification applications, specifically designed for low voltage, high-speed operations.
The pins and their functions are as follows:
1. Gate 1: Controls the first MOSFET.
2. Drain 1: Output for the first MOSFET.
3. Source 1: Source terminal for the first MOSFET.
4. Gate 2: Controls the second MOSFET.
5. Drain 2: Output for the second MOSFET.
6. Source 2: Source terminal for the second MOSFET.
7. Drain (Common): Common drain for both MOSFETs, often used in configurations where both share a load.
8. Ground: Common ground reference for the device.
The NSS12201LT1G is commonly utilized in power management and load switching applications due to its efficiency and compact design.

Manufacturer

The NSS12201LT1G is manufactured by ON Semiconductor, a global provider of semiconductor solutions. ON Semiconductor specializes in designing and manufacturing a wide range of semiconductor components, including power management, analog, and logic devices, as well as sensors and connectivity solutions. The company serves various markets, including automotive, industrial, communications, and consumer electronics. Founded in 1999, ON Semiconductor has grown through a series of strategic acquisitions and has positioned itself as a leader in energy-efficient technologies and solutions.

Application

The NSS12201LT1G is a low-dropout (LDO) voltage regulator primarily used in applications requiring stable output voltage with low noise. Typical areas include portable devices, battery-operated systems, microcontrollers, and other electronic circuits needing precision voltage regulation. Its compact surface-mount design makes it suitable for space-constrained applications in consumer electronics, automotive, and industrial equipment.

Equivalent

The NSS12201LT1G is a dual N-channel MOSFET. Equivalent products include the IRLML2502, BSSN20, and AO3400. Ensure to compare specifications like voltage rating, current rating, and package type to confirm compatibility for your specific application.

Versand

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Versandgebührenreferenz (DHL/FedEx):

DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.

von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.

Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

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