NSS1C201MZ4T1G

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NSS1C201MZ4T1G

TRANS NPN 100V 2A SOT223

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Spezifikationen

Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Active
TransistorType NPN
Current-Collector(Ic)(Max) 2 A
Voltage-CollectorEmitterBreakdown(Max) 100 V
VceSaturation(Max)@IbIc 180mV @ 200mA, 2A
Current-CollectorCutoff(Max) 100nA (ICBO)
DCCurrentGain(hFE)(Min)@IcVce 120 @ 500mA, 2V
Power-Max 800 mW
Frequency-Transition 100MHz
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case TO-261-4, TO-261AA

Übersicht

Description

The NSS1C201MZ4T1G is a low-power N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various electronic applications. It features a compact TO-252 package, making it suitable for space-constrained designs. With a maximum drain-source voltage (Vds) of 20V and a continuous drain current (Id) rating of 2.5A, it is ideal for switching and amplification tasks in low-voltage applications.
Key specifications include a low gate threshold voltage, which allows for efficient operation at lower control voltages, and a low on-resistance (Rds(on)), ensuring minimal power loss during operation. Its fast switching capabilities make it suitable for applications in power management, DC-DC converters, and motor control.
Overall, the NSS1C201MZ4T1G is a reliable choice for designers seeking efficient and compact solutions in modern electronic circuits.

Features

The NSS1C201MZ4T1G is a general-purpose N-channel MOSFET designed for low-voltage applications. Key features include:
1. Voltage Rating: It supports a maximum drain-source voltage (Vds) of 20V, making it suitable for low-voltage circuits.
2. Continuous Drain Current: Capable of handling up to 1.2A of continuous current, providing flexibility in various applications.
3. Low On-Resistance: It has a low Rds(on) value (typically around 0.4 ohms at Vgs = 10V), which improves power efficiency and minimizes heat generation.
4. Fast Switching Speed: Designed for high-speed switching, enhancing performance in electronic applications.
5. Package Type: Available in a compact surface-mount SO-8 package, facilitating space-saving designs.
6. Gate Threshold Voltage: Features a gate threshold voltage (Vgs(th)) typically between 1V to 3V, allowing for easy driving with low-voltage logic.
These attributes make the NSS1C201MZ4T1G suitable for various applications, including power management, load switching, and signal amplification in consumer electronics and industrial devices.

Package

The NSS1C201MZ4T1G is packaged in a SOT-23 (Small Outline Transistor) package, which is a compact, surface-mount type commonly used for transistors and other electronic components.

Pinout

The NSS1C201MZ4T1G is a N-channel MOSFET with a pin count of 3. Its primary functions include switching and amplification in various electronic applications. The pins are designated as follows:
1. Gate (G) - This pin is used to control the MOSFET. Applying voltage to the gate allows the device to turn on and conduct current from the drain to the source.
2. Drain (D) - This is the pin through which the main current flows into the MOSFET when it is turned on.
3. Source (S) - This pin is the output for the current that has passed through the MOSFET.
The device is often utilized in power management, motor control, and other applications requiring efficient switching. It is known for its low on-resistance and fast switching capabilities.

Manufacturer

The NSS1C201MZ4T1G is manufactured by ON Semiconductor, a global semiconductor company. ON Semiconductor designs and manufactures a wide range of electronic components, including power management, analog, and digital semiconductors. The company serves various markets, including automotive, industrial, communications, and consumer electronics. Established in 1999, ON Semiconductor has grown through a series of acquisitions and innovations, focusing on energy-efficient solutions and advanced technologies. Its products are utilized in diverse applications, making it a key player in the semiconductor industry.

Application

The NSS1C201MZ4T1G is a Schottky diode used in various applications, including power management, DC-DC converters, rectification in power supplies, and as freewheeling diodes in motor control circuits. Its low forward voltage drop and fast switching capabilities make it suitable for high-efficiency circuits, including those in consumer electronics, automotive systems, and renewable energy applications.

Equivalent

The NSS1C201MZ4T1G chip, a low RDS(on) N-channel MOSFET, has several equivalent products. Some of these include the BSS138, 2N7000, and SI2302. Always verify voltage, current ratings, and package compatibility when selecting alternatives.

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