NT5AD512M8E3-JRI

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NT5AD512M8E3-JRI

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Spezifikationen

EU RoHS Compliant
ECCN (US) EAR99
Part Status Active
HTS 8542.32.00.36
Automotive Unknown
PPAP Unknown
Chip Density (bit) 4G
Number of Bits/Word (bit) 8
Minimum Operating Supply Voltage (V) 1.14
Typical Operating Supply Voltage (V) 1.2
Maximum Operating Supply Voltage (V) 1.26
Operating Current (mA) 206
Minimum Operating Temperature (°C) -40
Maximum Operating Temperature (°C) 95
Mounting Surface Mount
Package Height 1(Max)
Package Width 7.5
Package Length 10.5
PCB changed 78
Supplier Package TFBGA
Pin Count 78
DRAM Type DDR4 SDRAM
Organization 512Mx8
Number of Internal Banks 4
Number of Words per Bank 128M
Data Bus Width (bit) 8
Maximum Clock Rate (MHz) 3200
Maximum Access Time (ns) 0.16
Address Bus Width (bit) 17
Number of I/O Lines (bit) 8
Supplier Temperature Grade Industrial

Übersicht

Description

The NT5AD512M8E3-JRI is a high-performance DDR3 SDRAM (Synchronous Dynamic Random Access Memory) module, typically utilized in various computing applications. Manufactured by Nanya Technology, this specific model features a capacity of 512 MB, operates at a voltage of 1.5V, and supports data rates of up to 1600 MT/s (megatransfers per second). It is designed for efficient memory management and enhanced performance in both consumer and industrial devices.
Key features include its compatibility with PC3-12800 standards, enabling faster data transfer rates, and its low power consumption, which is essential for battery-operated devices. The module’s design adheres to the SO-DIMM (Small Outline Dual In-line Memory Module) form factor, making it suitable for laptops and compact systems. It also supports features like ECC (Error-Correcting Code) for improved data integrity.
Overall, the NT5AD512M8E3-JRI is an effective solution for applications requiring reliable and efficient memory performance.

Features

The NT5AD512M8E3-JRI is a 512MB DDR3 SDRAM memory module designed for high-performance applications. Here are its key features:
1. Type: DDR3 SDRAM
2. Capacity: 512MB
3. Speed: Typically operates at speeds up to 1066 MT/s (megatransfers per second).
4. Organization: Organized as 64 bits x 8 bits.
5. Pin Count: 96-ball FBGA (Fine-pitch Ball Grid Array) package.
6. Voltage: Operates at a low voltage of 1.5V, which helps reduce power consumption.
7. Data Rate: Supports high data transfer rates suitable for various applications.
8. Features: Includes features like burst length of 8 and support for command/address multiplexing.
9. Thermal Characteristics: Designed for efficient thermal performance.
10. Applications: Suitable for use in mobile devices, embedded systems, and other applications requiring compact memory solutions.
This module is ideal for systems that require reliable, efficient, and compact memory solutions.

Package

The NT5AD512M8E3-JRI is a DDR3 SDRAM memory chip packaged in an 8-ball BGA (Ball Grid Array) format.

Pinout

The NT5AD512M8E3-JRI is a DDR3 DRAM memory chip with a pin count of 78. It is designed for use in various memory applications, including computers and other electronic devices. The primary function of this chip is to serve as a volatile memory module that temporarily stores data for quick access by the processor.
Key functions of the NT5AD512M8E3-JRI include:
1. Data Storage: It provides temporary storage for data being processed by the system.
2. High-Speed Performance: Supports high-speed data transfer rates typical of DDR3 memory.
3. Low Power Consumption: Designed to operate efficiently with lower power requirements compared to earlier memory technologies.
This chip typically operates at a voltage of 1.5V and supports various memory configurations, enhancing system performance in computing environments.

Manufacturer

The NT5AD512M8E3-JRI is manufactured by Nanya Technology Corporation. Nanya is a Taiwanese company that specializes in the production of dynamic random-access memory (DRAM) products. Founded in 1995, Nanya is known for its focus on DRAM memory solutions for various applications, including consumer electronics, computers, and servers. The company is recognized for its commitment to technology innovation and quality in the semiconductor industry. Nanya is one of the major DRAM manufacturers globally, competing with other companies in the market to provide high-performance memory products.

Application

The NT5AD512M8E3-JRI is a 512 Mb DDR3 SDRAM memory chip commonly used in applications such as laptops, desktops, servers, and high-performance computing devices. Its features support tasks requiring efficient data processing and high-speed memory access, making it suitable for gaming systems, embedded systems, and networking equipment. Additionally, it finds use in consumer electronics and industrial applications that demand reliable memory solutions.

Equivalent

The NT5AD512M8E3-JRI chip is a DDR3 SDRAM memory module with a capacity of 4GB. Equivalent products include:
1. Hynix H5TQ4G83AFR
2. Micron MT41K256M8HA-125
3. Samsung K4B4G0846B-HCK0
Ensure compatibility with your specific application and device requirements.

Versand

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Versandgebührenreferenz (DHL/FedEx):

DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.

von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.

Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

Zahlungen

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