NT5DS32M16ES-5T

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NT5DS32M16ES-5T

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Spezifikationen

EU RoHS Compliant
ECCN (US) EAR99
Part Status Obsolete
HTS 8542.32.00.28
Automotive Unknown
PPAP Unknown
Minimum Operating Supply Voltage (V) 2.3
Typical Operating Supply Voltage (V) 2.5
Maximum Operating Supply Voltage (V) 2.7
Minimum Operating Temperature (°C) 0
Maximum Operating Temperature (°C) 70
Supplier Temperature Grade Commercial
Mounting Surface Mount
Package Height 1.2(Max)
Package Width 10.16
Package Length 22.22
PCB changed 66
Standard Package Name SO
Supplier Package TSOP-II
Pin Count 66
Chip Density (bit) 512M
Number of Bits/Word (bit) 16
Data Bus Width (bit) 16
Maximum Clock Rate (MHz) 400
DRAM Type DDR SDRAM
Organization 32Mx16
Number of Internal Banks 4
Number of Words per Bank 8M
Address Bus Width (bit) 15
Operating Current (mA) 120
Number of I/O Lines (bit) 16
Maximum Access Time (ns) 0.7
Interface Type SSTL_2

Übersicht

Description

The NT5DS32M16ES-5T is a DRAM (Dynamic Random Access Memory) chip produced by Nanya Technology. It is a 512MB (megabyte) DDR2 SDRAM (Double Data Rate Synchronous Dynamic RAM), designed for various applications in computing and electronic devices. Operating at a 5V supply voltage, it features a 16-bit wide data bus and is commonly used in memory modules for laptops, desktops, and embedded systems.
Key specifications include a clock speed typically around 400 MHz, allowing for efficient data transfer rates, and a density of 32MB per chip. The package is usually in a TSOP (Thin Small Outline Package) format, facilitating easy integration onto PCBs (Printed Circuit Boards). DDR2 technology enhances performance over its predecessor, DDR, by enabling faster data access and lower power consumption.
Overall, the NT5DS32M16ES-5T is a reliable choice for enhancing memory performance in various electronic applications.

Features

The NT5DS32M16ES-5T is a DDR3 SDRAM (Synchronous Dynamic Random Access Memory) module produced by Nanya Technology. Key features include:
1. Capacity: 2GB (Gigabytes) of memory.
2. Configuration: 256M x 16 bits configuration, allowing for efficient data handling.
3. Speed: Operates at a clock speed of 1600 MT/s (megatransfers per second), enabling high-speed data transfer.
4. Voltage: Typically operates at a 1.5V power supply, compatible with standard DDR3 applications.
5. Package Type: Available in a 78-ball FBGA (Fine Ball Grid Array) package for compact integration.
6. Latency: CL11 (CAS Latency of 11), suitable for various applications requiring moderate latency.
7. Compatibility: Designed for use in laptops, desktops, and other devices supporting DDR3 memory.
This memory chip is ideal for applications requiring reliable performance and efficiency in data-intensive environments.

Package

The NT5DS32M16ES-5T is a DDR3 SDRAM (Synchronous Dynamic Random Access Memory) chip packaged in a 78-ball FBGA (Fine Ball Grid Array) format. It typically features a compact design for efficient space utilization on PCBs.

Pinout

The NT5DS32M16ES-5T is a 32Mb (4MB) DDR2 SDRAM memory chip with a pin count of 54. Its primary function is to serve as a dynamic random-access memory (DRAM) component in various electronic devices, providing temporary storage for data and instructions to improve processing speed and efficiency. This device operates at a voltage of 1.8V and is designed for use in applications such as mobile devices, networking equipment, and consumer electronics, where low power consumption and high performance are essential. The chip features a synchronous interface, allowing it to synchronize with the system clock for effective data transfer.

Manufacturer

The manufacturer of the NT5DS32M16ES-5T is Nanya Technology Corporation. Nanya is a Taiwanese company specializing in the production of dynamic random-access memory (DRAM) and related semiconductor products. Founded in 1995, it is one of the major DRAM manufacturers globally, focusing on providing high-quality memory solutions for various applications, including computers, mobile devices, and automotive electronics. The company is publicly traded and is involved in research and development to advance memory technology, ensuring efficiency and performance in its products.

Application

The NT5DS32M16ES-5T is a 512Mb DDR3 SDRAM chip commonly used in various applications, including industrial automation, telecommunications, networking equipment, consumer electronics, and computing devices. Its high-speed performance and efficiency make it suitable for tasks requiring fast data processing and reliable memory solutions in laptops, desktops, servers, and embedded systems.

Equivalent

The NT5DS32M16ES-5T is a DDR3 SDRAM memory chip. Equivalent products include:
1. MT41J256M16HA-125
2. H5TQ2G63AFR-PBA
3. K4B4G1646D-BCK0
Ensure compatibility with the specific application in terms of speed, voltage, and configuration before substituting.

Versand

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bieten Sie globale Versanddienstleistungen durch DHL, FedEx, TNT, UPS oder einen anderen Spediteur Ihrer Wahl.


Versandgebührenreferenz (DHL/FedEx):

DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.

von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.

Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

Zahlungen

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