NT5TU64M16HG-BE

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NT5TU64M16HG-BE

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Spezifikationen

EU RoHS Compliant
ECCN (US) EAR99
Part Status Active
HTS 8542.32.00.32
Automotive No
PPAP No
Minimum Operating Supply Voltage (V) 1.7
Typical Operating Supply Voltage (V) 1.8
Maximum Operating Supply Voltage (V) 1.9
Minimum Operating Temperature (°C) 0
Maximum Operating Temperature (°C) 95
Supplier Temperature Grade Commercial
Mounting Surface Mount
Package Height 0.8(Max)
Package Width 8
Package Length 12.5
PCB changed 84
Standard Package Name BGA
Supplier Package BGA
Pin Count 84
Lead Shape Ball
Chip Density (bit) 1G
Number of Bits/Word (bit) 16
Data Bus Width (bit) 16
Maximum Clock Rate (MHz) 1066
DRAM Type DDR2 SDRAM
Organization 64Mx16
Number of Internal Banks 8
Number of Words per Bank 8M
Address Bus Width (bit) 16
Operating Current (mA) 165
Number of I/O Lines (bit) 16
Maximum Access Time (ns) 0.35
Interface Type SSTL_1.8

Übersicht

Description

The NT5TU64M16HG-BE is a 1GB DDR2 SDRAM (Synchronous Dynamic Random Access Memory) module produced by Nanya Technology Corporation. It features a 200-pin SO-DIMM form factor, suitable for laptops and compact systems. Operating at a voltage of 1.8V, this memory module adheres to the DDR2 standard, providing data rates up to 800 MT/s (megatransfers per second) and a bandwidth of 6.4 GB/s.
It typically operates with a CAS latency of 3, ensuring efficient data retrieval for applications. The NT5TU64M16HG-BE is designed for high-performance computing, gaming, and general use, enhancing system responsiveness and multitasking capabilities. As a DRAM solution, it is often used in conjunction with various chipsets and is backward compatible with DDR SDRAM, although performance may be limited by the older technology. This module is ideal for upgrading systems that support DDR2 memory, providing a balance of performance and power efficiency.

Features

The NT5TU64M16HG-BE is a DDR3 SDRAM (Synchronous Dynamic Random Access Memory) module produced by Nanya Technology. Here are its key features:
1. Type: DDR3 SDRAM, commonly used in desktops and laptops.
2. Capacity: 2GB (gigabytes), suitable for basic computing needs.
3. Data Rate: Operates at a speed of 1066 MT/s (megatransfers per second), providing moderate performance.
4. Memory Organization: 1 x 16-bit organization, allowing efficient data processing.
5. Voltage: Operates at a voltage of 1.5V, which is standard for DDR3 memory, ensuring compatibility with many systems.
6. Timing: Typically features a CAS latency of CL7 or CL8, which impacts the speed of data access.
7. Form Factor: SO-DIMM (Small Outline Dual In-line Memory Module), making it compact and suitable for laptops.
This module is designed for reliable performance in various computing applications, balancing capacity and speed for everyday tasks.

Package

The NT5TU64M16HG-BE is a DDR3 SDRAM memory chip packaged in a 78-ball TFBGA (Thin Fine Pitch Ball Grid Array) format. This package type is designed for efficient thermal performance and space-saving in electronic applications.

Pinout

The NT5TU64M16HG-BE is a DRAM memory chip with a pin count of 84. It is a DDR3 SDRAM (Double Data Rate Synchronous Dynamic Random Access Memory) component designed for use in various memory applications, including laptops and desktops. This chip features a 64 Meg x 16 configuration, providing a total memory capacity of 1 Gigabit (1Gbit).
Key functions of the NT5TU64M16HG-BE include data storage, read and write operations, and support for high-speed data transfer rates typical of DDR3 technology. It operates on a supply voltage of 1.5V and is compliant with JEDEC standards for DDR3 memory. The chip typically facilitates features such as burst read/write operations and has various control signals for synchronization and data integrity.

Manufacturer

The NT5TU64M16HG-BE is manufactured by Nanya Technology Corporation, a Taiwanese company that specializes in the design and production of memory products, particularly DRAM (Dynamic Random-Access Memory). Founded in 1995, Nanya operates as a subsidiary of Formosa Plastics Group and is known for its focus on high-quality memory solutions for various applications, including computing, automotive, and consumer electronics. Nanya is recognized for its advancements in DRAM technology and its commitment to sustainable practices in manufacturing.

Application

The NT5TU64M16HG-BE is a DRAM memory module primarily used in consumer electronics, such as smartphones, tablets, and laptops. Its applications extend to networking devices, automotive systems, and industrial equipment requiring reliable memory solutions. Its high-density and low-power characteristics make it suitable for compact and energy-efficient designs, enhancing overall device performance.

Equivalent

The NT5TU64M16HG-BE is a DDR3 SDRAM memory chip. Equivalent products include:
1. Hynix H5TQ2G63AFR
2. Micron MT41K256M16HA
3. Samsung K4B4G1646F
4. Elpida EDJ2104B2M
5. Nanya NT5TU64M16HG-AC
Ensure to verify specifications like voltage, speed, and pin configuration for compatibility.

Versand

VersandmethodenWir

bieten Sie globale Versanddienstleistungen durch DHL, FedEx, TNT, UPS oder einen anderen Spediteur Ihrer Wahl.


Versandgebührenreferenz (DHL/FedEx):

DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.

von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.

Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

Zahlungen

Payment Methods

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