NTA4153NT1G

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NTA4153NT1G

MOSFET N-CH 20V 915MA SC75

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  • Fr. Teil #NTA4153NT1G
  • Paket SC-75-3
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Spezifikationen

Package Tape & Reel (TR),Cut Tape (CT),Bulk
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 20 V
Current-ContinuousDrain(Id)@25°C 915mA (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 1.5V, 4.5V
RdsOn(Max)@IdVgs 230mOhm @ 600mA, 4.5V
Vgs(th)(Max)@Id 1.1V @ 250µA
GateCharge(Qg)(Max)@Vgs 1.82 nC @ 4.5 V
Vgs(Max) ±6V
InputCapacitance(Ciss)(Max)@Vds 110 pF @ 16 V
PowerDissipation(Max) 300mW (Tj)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage SC-75, SOT-416

Übersicht

Description

NTA4153NT1G is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various electronic applications. It features a low on-resistance and fast switching capabilities, making it ideal for power management tasks, such as in DC-DC converters, motor controllers, and load switches.
Key specifications typically include a maximum drain-source voltage (V_DS), a high continuous drain current (I_D), and a low gate threshold voltage (V_GS(th)). These attributes enable efficient operation and thermal management in compact circuits.
The "G" suffix indicates that it is available in a surface-mounted package, facilitating easier integration into modern PCB designs. This MOSFET is valued for its reliability and performance, making it suitable for consumer electronics, automotive applications, and industrial systems.
Overall, NTA4153NT1G exemplifies the advancements in semiconductor technology aimed at enhancing energy efficiency and performance in electronic devices.

Features

The NTA4153NT1G is an N-channel MOSFET designed for high-efficiency applications. Key features include:
- Voltage Rating: It has a maximum drain-source voltage (VDS) of 30V, making it suitable for low-voltage applications.
- Current Rating: The device can handle a continuous drain current (ID) of up to 60A, providing robust performance in power management tasks.
- RDS(on): It boasts a low on-resistance (RDS(on)), typically around 8 mΩ, which enhances efficiency by reducing power loss during operation.
- Gate Threshold Voltage: The gate threshold voltage (VGS(th)) ranges from 2V to 4V, allowing it to be easily driven by low-voltage logic levels.
- Package: It comes in a TO-220 package, ensuring good thermal performance and ease of heat dissipation.
- Switching Speed: The NTA4153NT1G features fast switching capabilities, making it suitable for applications like DC-DC converters, motor drives, and power management systems.
These characteristics make the NTA4153NT1G an excellent choice for various electronic and power applications.

Package

The NTA4153NT1G is packaged in a SOT-223 surface mount package.

Pinout

The NTA4153NT1G is a N-channel MOSFET with a total of 6 pins. Its primary functions include acting as a switch or amplifier in electronic circuits, particularly in low voltage applications. The pin configuration typically includes:
1. Gate (G): Controls the MOSFET operation.
2. Drain (D): The output terminal where the current flows out.
3. Source (S): The terminal through which the current enters the MOSFET.
The specific pin arrangement may vary slightly based on the package type, but generally follows this structure. The NTA4153NT1G is designed for low voltage, high-speed switching applications, making it suitable for various consumer electronics and power management tasks. Additionally, it features low on-resistance and fast switching capabilities, enhancing efficiency in circuits.

Manufacturer

The NTA4153NT1G is manufactured by ON Semiconductor, a global semiconductor company that specializes in designing and manufacturing a wide range of electronic components. ON Semiconductor provides innovative solutions for various applications, including automotive, industrial, communications, computing, and consumer electronics. The company focuses on energy-efficient technologies and has a strong commitment to sustainability. With a broad portfolio of products, including power management, analog, discrete, and logic devices, ON Semiconductor serves a diverse set of industries and is recognized for its contributions to advancing semiconductor technology.

Application

The NTA4153NT1G is a low-power, dual N-channel MOSFET commonly used in applications such as power management, load switching, battery management systems, and DC-DC converters. Its compact package and efficient performance make it suitable for use in portable devices, consumer electronics, and automotive applications where space and energy efficiency are critical.

Equivalent

The NTA4153NT1G is an N-channel MOSFET. Equivalent products include the BSS138, IRF3708, and BS170, among others. When selecting an equivalent, ensure compatibility with parameters such as voltage rating, current handling, RDS(on), and package type for your specific application. Always check the datasheets for precise specifications.

Versand

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Versandgebührenreferenz (DHL/FedEx):

DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.

von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.

Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

Zahlungen

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