NTD360N80S3Z

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NTD360N80S3Z

MOSFET N-CH 800V 13A DPAK

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  • Fr. Teil #NTD360N80S3Z
  • Paket TO-252-3
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Spezifikationen

Package Tape & Reel (TR),Cut Tape (CT)
Series SuperFET® III
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 800 V
Current-ContinuousDrain(Id)@25°C 13A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 360mOhm @ 6.5A, 10V
Vgs(th)(Max)@Id 3.8V @ 300µA
GateCharge(Qg)(Max)@Vgs 25.3 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 1143 pF @ 400 V
PowerDissipation(Max) 96W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage D-PAK (TO-252)

Übersicht

Description

NTD360N80S3Z is a high-performance N-channel MOSFET designed for power applications. It features a maximum drain-source voltage (V_DS) of 800V, a continuous drain current (I_D) of 360A, and a low on-resistance (R_DS(on)), which enhances efficiency in switching applications. This MOSFET is particularly suitable for renewable energy systems, industrial power supplies, and motor drives due to its robustness and thermal performance.
The device typically comes in a TO-247 package, allowing for effective heat dissipation. It is characterized by fast switching speeds, making it ideal for applications that require rapid on-off control. The NTD360N80S3Z also includes intrinsic body diodes, providing additional functionalities for various circuit configurations.
Overall, this MOSFET is engineered for high voltage and high current applications, ensuring reliability and efficiency in demanding environments.

Features

The NTD360N80S3Z is an N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 80V, making it suitable for high-voltage applications.
2. Continuous Drain Current: Capable of handling a continuous drain current (I_D) of 360A, which supports high power designs.
3. Low On-Resistance: Features a low R_DS(on) value, reducing conduction losses and improving efficiency.
4. Fast Switching Speed: Designed for high-speed switching, ideal for applications like power supplies and motor drives.
5. Thermal Performance: Comes in a TO-220 package, providing good thermal management for high power dissipation.
6. Gate Threshold Voltage: Optimized for low gate voltage drive, enhancing compatibility with various control circuits.
Overall, the NTD360N80S3Z is suitable for applications in power management, automotive systems, and industrial equipment, where efficiency and reliability are critical.

Package

The NTD360N80S3Z is packaged in a TO-247 format. This package type is designed for high-power applications, providing effective thermal management and robust electrical performance.

Pinout

The NTD360N80S3Z is a N-channel MOSFET with a pin count of 8. It is commonly used in applications such as power management and switching. The pin functions are as follows:
1. Gate (G) - Controls the MOSFET's switching on and off.
2. Drain (D) - The terminal through which the load current flows when the MOSFET is in the 'on' state.
3. Source (S) - The terminal connected to the ground or the negative side of the circuit.
The other pins may include additional features such as a tab for heat dissipation, depending on the packaging. The device is designed for high voltage applications, with a maximum drain-source voltage of 80V and a continuous drain current rating of 360A. It is well-suited for high-efficiency switching applications in power supplies and motor control.

Manufacturer

The NTD360N80S3Z is manufactured by ON Semiconductor, a global supplier of semiconductor-based solutions. ON Semiconductor specializes in designing and manufacturing a wide range of semiconductor products, including power management, analog, logic, and discrete components. The company serves various industries, including automotive, industrial, communications, consumer electronics, and computing. ON Semiconductor focuses on innovation and sustainability, providing energy-efficient solutions to meet the growing demand for higher performance and lower power consumption in electronic devices.

Application

The NTD360N80S3Z is a high-voltage N-channel MOSFET primarily used in applications such as power management, DC-DC converters, motor drives, and industrial automation. Its features enable efficient switching in power supplies, renewable energy systems, and electric vehicles, making it suitable for high-performance electronic circuits requiring low on-resistance and fast switching capabilities.

Equivalent

The NTD360N80S3Z is a power MOSFET. Equivalent products include the STP36NF80, MTP36N80E, IRF360, and FDP36N80. Always check the specifications for voltage, current, and package compatibility before substitution.

Versand

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UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.

Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

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