NTD5865NLT4G

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NTD5865NLT4G

MOSFET N-CH 60V 46A DPAK

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  • Fr. Teil #NTD5865NLT4G
  • Paket DPAK-3
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Spezifikationen

Package Tape & Reel (TR),Cut Tape (CT),Bulk
ProductStatus Last Time Buy
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 60 V
Current-ContinuousDrain(Id)@25°C 46A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 16mOhm @ 20A, 10V
Vgs(th)(Max)@Id 2V @ 250µA
GateCharge(Qg)(Max)@Vgs 29 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 1400 pF @ 25 V
PowerDissipation(Max) 71W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount
SupplierDevicePackage DPAK

Übersicht

Description

The NTD5865NLT4G is a high-performance N-channel MOSFET designed for various power management applications. It features a low on-resistance (RDS(on)) to minimize power losses, making it suitable for efficient switching and amplification tasks. With a maximum drain-source voltage of 60V and a continuous drain current of up to 40A, it is ideal for applications in power supplies, motor control, and DC-DC converters.
The device is housed in a TO-220 package, allowing for effective heat dissipation, which is crucial in high-power applications. Its fast switching speeds make it advantageous for applications that require quick response times. The NTD5865NLT4G also incorporates a gate-source voltage rating that ensures safe operation and enhances reliability.
Overall, this MOSFET is widely used in consumer electronics, industrial systems, and renewable energy solutions due to its robustness and efficiency.

Features

The NTD5865NLT4G is an N-channel MOSFET designed for various applications, including power management and switching. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V.
2. Current Rating: It can handle continuous drain current (I_D) up to 60A.
3. R_DS(on): This MOSFET exhibits a low on-resistance, typically around 8 mΩ at a V_GS of 10V, which enhances efficiency.
4. Package: It comes in a TO-220 package, facilitating easy heat dissipation and mounting.
5. Fast Switching: Suitable for high-speed switching applications due to its low gate charge.
6. Thermal Performance: Designed for effective thermal management, allowing for robust performance in demanding environments.
7. Gate Threshold Voltage: The gate-source threshold voltage (V_GS) ranges from 2V to 4V, making it compatible with low-voltage drive circuits.
These features make the NTD5865NLT4G ideal for applications in automotive, industrial, and consumer electronics.

Package

The NTD5865NLT4G is packaged in a TO-220 form factor. This package type is commonly used for power transistors, providing effective heat dissipation and easy mounting on heatsinks.

Pinout

The NTD5865NLT4G is a N-channel MOSFET with a pin count of 8. It is typically used in power management applications, including switching and amplification.
Pin Function:
1. Gate (G) - Controls the MOSFET operation; voltage applied here turns the device on/off.
2. Drain (D) - The output terminal where current flows out of the MOSFET.
3. Source (S) - The terminal through which current enters the MOSFET.
4. Body Diode - Internal diode for flyback protection in inductive load applications.
The device is designed for high efficiency with low R_DS(on) and fast switching capabilities, making it suitable for applications such as DC-DC converters, motor control, and load switching.

Manufacturer

The NTD5865NLT4G is manufactured by ON Semiconductor, a global supplier of semiconductor-based solutions. ON Semiconductor specializes in a wide range of products, including power management, analog, and mixed-signal integrated circuits. The company serves various industries, such as automotive, consumer electronics, industrial, and telecommunications, by providing efficient and innovative technologies that enable the design of energy-efficient systems. Founded in 1999, ON Semiconductor has established a strong presence in the semiconductor market, focusing on sustainability and high-performance solutions.

Application

The NTD5865NLT4G is a N-channel MOSFET primarily used in power management applications. Its areas of application include DC-DC converters, motor drive circuits, and load switching in power supplies. It is suitable for high-efficiency power systems, automotive electronics, and consumer products, where low on-resistance and high-speed switching capabilities are essential.

Equivalent

The NTD5865NLT4G is a N-channel MOSFET. Equivalent products include IRF3205, BSC027N06LS, and STP75NF75. Always check specifications for voltage, current ratings, Rds(on), and package type to ensure compatibility.

Versand

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Versandgebührenreferenz (DHL/FedEx):

DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.

von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.

Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

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