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NTH4L040N120M3S
SILICON CARBIDE (SIC) MOSFET ELI
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- Fr. Teil #NTH4L040N120M3S
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- Datenblatt NTH4L040N120M3S DataSheet
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Spezifikationen
| Part Status | Active |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 54A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Rds On (Max) @ Id, Vgs | 54mOhm @ 20A, 18V |
| Vgs(th) (Max) @ Id | 4.4V @ 10mA |
| Gate Charge (Qg) (Max) @ Vgs | 75 nC @ 18 V |
| Vgs (Max) | +22V, -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1700 pF @ 800 V |
| Power Dissipation (Max) | 231W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-4L |
| Package / Case | TO-247-4 |
Übersicht
Description
This MOSFET is often utilized in switch-mode power supplies, motor drives, and automotive applications due to its excellent thermal performance and fast switching capabilities. The NTH4L040N120M3S typically comes in a TO-220 or similar package, which aids in heat dissipation.
Key specifications include low gate charge, high-speed switching, and robust avalanche ratings, making it suitable for various electronic circuits requiring efficient power handling. Its design helps enhance system reliability and efficiency, contributing to overall performance improvements in applications such as renewable energy systems and electric vehicles.
Understanding its electrical characteristics and thermal management is crucial for optimal integration into electronic designs.
Features
1. Voltage Rating: Capable of withstanding a drain-source voltage (V_DS) of 120V, making it suitable for high-voltage applications.
2. Current Rating: Supports a continuous drain current (I_D) of up to 40A, allowing for significant load handling.
3. R_DS(on): Low on-resistance (typically around 0.04Ω), which minimizes conduction losses and improves efficiency.
4. Fast Switching: Designed for rapid switching capabilities, enhancing performance in switching power supplies and converters.
5. Package Type: Available in a TO-247 package, which aids in heat dissipation and provides robust thermal management.
6. Thermal Resistance: Low thermal resistance ensures efficient heat transfer, contributing to reliability in various operating conditions.
7. Applications: Suitable for automotive, industrial, and consumer electronics applications, particularly in DC-DC converters and motor drives.
Overall, the NTH4L040N120M3S is a versatile and efficient MOSFET ideal for demanding power applications.
Package
Pinout
The pin configuration is as follows:
1. Gate – Controls the MOSFET operation.
2. Drain – The output terminal where current flows out.
3. Source – The terminal through which current enters the MOSFET.
The device is designed for low on-resistance (RDS(on)) and high-speed switching capabilities, making it suitable for various power applications. Always refer to the manufacturer’s datasheet for detailed specifications and operational guidelines.
Manufacturer
Application
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Zahlungen
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