NTH4L040N120SC1

Bilder sind nur zur Referenz

NTH4L040N120SC1

SICFET N-CH 1200V 58A TO247-4

100% Original und Neu

24 Stunden bereit zum Versand

365 Tage Garantie

RFQ & Erhalten Sie mehr Rabatte

Spezifikationen

Supplier onsemi
Package Tube
ProductStatus Active
FETType N-Channel
Technology SiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss) 1200 V
Current-ContinuousDrain(Id)@25°C 58A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 20V
RdsOn(Max)@IdVgs 56mOhm @ 35A, 20V
Vgs(th)(Max)@Id 4.3V @ 10mA
GateCharge(Qg)(Max)@Vgs 106 nC @ 20 V
Vgs(Max) +25V, -15V
InputCapacitance(Ciss)(Max)@Vds 1762 pF @ 800 V
PowerDissipation(Max) 319W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-247-4L

Übersicht

Description

The NTH4L040N120SC1 is a high-performance N-channel MOSFET designed for power management applications. It features low on-resistance and fast switching capabilities, making it suitable for efficient power conversion, switching applications, and high-frequency circuits. With a voltage rating of 120V and a current rating up to 40A, it is ideal for use in various applications such as DC-DC converters, motor drives, and industrial power supplies.
Key characteristics include a low gate threshold voltage, excellent thermal performance, and a robust package design that enhances reliability under operational stress. The MOSFET is typically housed in a TO-220 package, which facilitates efficient heat dissipation, ensuring better performance in demanding environments. Its low gate charge enables quick turn-on and turn-off cycles, improving overall system efficiency.
Engineers often select the NTH4L040N120SC1 for applications requiring high efficiency, reliability, and compact design. It is important to consult the specific datasheet for detailed electrical characteristics and thermal management guidelines.

Features

The NTH4L040N120SC1 is a high-performance N-channel MOSFET designed for various power management applications. Key features include:
1. Voltage Rating: Rated for a drain-source voltage (V_DS) of 120V, enabling use in high-voltage applications.
2. Current Rating: Capable of handling continuous drain current (I_D) of up to 40A, suitable for demanding tasks.
3. On-Resistance: Low on-resistance (R_DS(on)), typically around 0.04 ohms, which helps to minimize power loss and improve efficiency.
4. Gate Threshold Voltage: Optimized gate threshold voltage (V_GS(th)) for efficient drive control.
5. Fast Switching: Designed for fast switching speeds, making it ideal for switching applications in power supplies and motor drives.
6. Package: Available in a TO-220 package, facilitating easy mounting and heat dissipation.
7. Thermal Resistance: Low thermal resistance enhances performance under thermal stress.
These features make the NTH4L040N120SC1 suitable for various applications, including power converters, automotive systems, and industrial equipment.

Package

The NTH4L040N120SC1 is packaged in a DPAK (TO-252) package type, which is a surface-mount package designed for high power applications.

Pinout

The NTH4L040N120SC1 is an N-channel MOSFET designed for high-efficiency power applications. It features a pin count of 8 pins.
The pin functions are as follows:
1. Gate (G) - Controls the MOSFET's on/off state.
2. Drain (D) - The output terminal where the load is connected.
3. Source (S) - The terminal connected to the ground or negative voltage.
4. Body Diode - Integrated diode between Source and Drain for reverse current protection.
The remaining pins are used for mechanical mounting and thermal dissipation, ensuring reliability during operation. The device is typically used in power management, switching applications, and motor control.

Manufacturer

The NTH4L040N120SC1 is manufactured by Nexperia, a global semiconductor company. Nexperia specializes in discrete, logic, and MOSFET components, providing a wide range of products used in various applications, including automotive, industrial, and consumer electronics. The company was formed from the divestment of NXP Semiconductors' standard products division and is known for its focus on efficiency, performance, and reliability in its semiconductor solutions.

Application

The NTH4L040N120SC1 is a high-performance N-channel MOSFET used primarily in applications such as power management, DC-DC converters, motor drives, and switching power supplies. Its low on-resistance and high-speed switching capabilities make it ideal for efficient power conversion and thermal management in various electronic devices, including automotive, industrial, and consumer electronics.

Equivalent

The NTH4L040N120SC1 is an N-channel MOSFET. Equivalent products include the STP40NF120, IRF840, and FQP40N120. Ensure to check specifications like voltage, current rating, and package type for compatibility. Always refer to the manufacturer's datasheet for precise comparisons.

Versand

VersandmethodenWir

bieten Sie globale Versanddienstleistungen durch DHL, FedEx, TNT, UPS oder einen anderen Spediteur Ihrer Wahl.


Versandgebührenreferenz (DHL/FedEx):

DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.

von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.

Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

Zahlungen

Payment Methods

Die Zahlungsfrist ist 100% Prepaid.

Derzeit akzeptieren wir nur die folgenden Zahlungsmethoden:

1. PayPal

2. Kredit- / Debitkarte

3. Überweisung