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NTH4L040N120SC1
SICFET N-CH 1200V 58A TO247-4
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- Fr. Teil #NTH4L040N120SC1
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- Datenblatt NTH4L040N120SC1 DataSheet
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Spezifikationen
| Supplier | onsemi |
| Package | Tube |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| DraintoSourceVoltage(Vdss) | 1200 V |
| Current-ContinuousDrain(Id)@25°C | 58A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 20V |
| RdsOn(Max)@IdVgs | 56mOhm @ 35A, 20V |
| Vgs(th)(Max)@Id | 4.3V @ 10mA |
| GateCharge(Qg)(Max)@Vgs | 106 nC @ 20 V |
| Vgs(Max) | +25V, -15V |
| InputCapacitance(Ciss)(Max)@Vds | 1762 pF @ 800 V |
| PowerDissipation(Max) | 319W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-247-4L |
Übersicht
Description
Key characteristics include a low gate threshold voltage, excellent thermal performance, and a robust package design that enhances reliability under operational stress. The MOSFET is typically housed in a TO-220 package, which facilitates efficient heat dissipation, ensuring better performance in demanding environments. Its low gate charge enables quick turn-on and turn-off cycles, improving overall system efficiency.
Engineers often select the NTH4L040N120SC1 for applications requiring high efficiency, reliability, and compact design. It is important to consult the specific datasheet for detailed electrical characteristics and thermal management guidelines.
Features
1. Voltage Rating: Rated for a drain-source voltage (V_DS) of 120V, enabling use in high-voltage applications.
2. Current Rating: Capable of handling continuous drain current (I_D) of up to 40A, suitable for demanding tasks.
3. On-Resistance: Low on-resistance (R_DS(on)), typically around 0.04 ohms, which helps to minimize power loss and improve efficiency.
4. Gate Threshold Voltage: Optimized gate threshold voltage (V_GS(th)) for efficient drive control.
5. Fast Switching: Designed for fast switching speeds, making it ideal for switching applications in power supplies and motor drives.
6. Package: Available in a TO-220 package, facilitating easy mounting and heat dissipation.
7. Thermal Resistance: Low thermal resistance enhances performance under thermal stress.
These features make the NTH4L040N120SC1 suitable for various applications, including power converters, automotive systems, and industrial equipment.
Package
Pinout
The pin functions are as follows:
1. Gate (G) - Controls the MOSFET's on/off state.
2. Drain (D) - The output terminal where the load is connected.
3. Source (S) - The terminal connected to the ground or negative voltage.
4. Body Diode - Integrated diode between Source and Drain for reverse current protection.
The remaining pins are used for mechanical mounting and thermal dissipation, ensuring reliability during operation. The device is typically used in power management, switching applications, and motor control.
Manufacturer
Application
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Zahlungen
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