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NTHD4502NT1G
MOSFET 2N-CH 30V 2.2A CHIPFET
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Spezifikationen
| Part Status | Obsolete |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 2.2A |
| Rds On (Max) @ Id, Vgs | 85mOhm @ 2.9A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 7nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 140pF @ 15V |
| Power - Max | 640mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SMD, Flat Leads |
| Supplier Device Package | ChipFET™ |
| Base Product Number | NTHD4502 |
Übersicht
Description
Key specifications include a maximum drain-source voltage (V_DS) of 30V and a continuous drain current (I_D) of up to 5.5A. The device is housed in a compact SO-8 package, facilitating ease of integration into various electronic designs.
With a fast switching capability and thermal stability, the NTHD4502NT1G is suitable for applications requiring rapid response times and reliable thermal management. Its efficiency and small footprint make it a popular choice in consumer electronics, automotive, and industrial applications.
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, making it suitable for low to moderate voltage applications.
2. Current Rating: The device can handle a continuous drain current (I_D) of up to 60A, which is beneficial for high-power applications.
3. Low On-Resistance: It exhibits a low R_DS(on) value, ensuring efficient operation with minimal power loss during switching.
4. Fast Switching Speed: This MOSFET offers fast switching capabilities, which are ideal for high-frequency applications.
5. Thermal Management: It features a robust thermal performance, with a maximum junction temperature of 150°C, allowing for reliable operation under high temperatures.
6. Package: The device is available in a DPAK package, providing ease of handling and assembly.
Overall, the NTHD4502NT1G is an efficient, reliable choice for various electronic applications requiring power switching and management.
Package
Pinout
1. Gate 1 (G1) - Controls the first N-channel MOSFET.
2. Source 1 (S1) - Source terminal for the first MOSFET.
3. Drain 1 (D1) - Drain terminal for the first MOSFET.
4. Gate 2 (G2) - Controls the second N-channel MOSFET.
5. Source 2 (S2) - Source terminal for the second MOSFET.
6. Drain 2 (D2) - Drain terminal for the second MOSFET.
The NTHD4502NT1G is commonly used in applications requiring efficient switching, such as power management and load control.
Manufacturer
Application
Equivalent
Versand
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Versandgebührenreferenz (DHL/FedEx):
DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.
von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
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Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.
Zahlungen
Payment Methods
Die Zahlungsfrist ist 100% Prepaid.
Derzeit akzeptieren wir nur die folgenden Zahlungsmethoden:
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3. Überweisung
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