NTJD4158CT1G

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NTJD4158CT1G

MOSFET N/P-CH 30V/20V SOT363

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  • Fr. Teil #NTJD4158CT1G
  • Paket SC-70-6
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Spezifikationen

Package Tape & Reel (TR),Cut Tape (CT),Bulk
ProductStatus Active
FETType N and P-Channel
FETFeature Logic Level Gate
DraintoSourceVoltage(Vdss) 30V, 20V
Current-ContinuousDrain(Id)@25°C 250mA, 880mA
RdsOn(Max)@IdVgs 1.5Ohm @ 10mA, 4.5V
Vgs(th)(Max)@Id 1.5V @ 100µA
GateCharge(Qg)(Max)@Vgs 1.5nC @ 5V
InputCapacitance(Ciss)(Max)@Vds 33pF @ 5V
Power-Max 270mW
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case 6-TSSOP, SC-88, SOT-363

Übersicht

Description

The NTJD4158CT1G is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency power management applications. It features a N-channel configuration, which allows for low on-resistance and fast switching capabilities, making it suitable for use in power supplies, motor control, and DC-DC converters.
Key specifications typically include a maximum drain-source voltage of around 30V, an on-resistance of a few milliohms, and a continuous drain current rating that supports various load conditions. This component is housed in a compact surface-mount package, facilitating easier integration into modern electronic designs.
Engineered for robustness, the NTJD4158CT1G is also characterized by its thermal performance, supporting efficient heat dissipation. It is ideal for applications requiring reliable and efficient power delivery with minimal energy loss.
Overall, the NTJD4158CT1G is a versatile choice for engineers looking to enhance the efficiency and performance of their electronic systems.

Features

The NTJD4158CT1G is a N-channel MOSFET designed for high-speed switching applications. Key features include:
1. Voltage Rating: It typically has a drain-source voltage (V_DS) of up to 30V, making it suitable for various low-voltage applications.
2. Current Rating: It supports a continuous drain current (I_D) of around 30A, allowing it to handle significant loads.
3. R_DS(on): The on-resistance is low (approximately 10 mΩ), ensuring efficient operation and reduced power loss during conduction.
4. Gate Threshold Voltage: It has a low gate threshold voltage (V_GS(th)), which enables it to be driven by lower gate voltages, enhancing compatibility with various control systems.
5. Package: Available in the DPAK package, it offers ease of handling and efficient thermal dissipation, important for high-power applications.
6. Applications: Ideal for use in power management, motor control, and DC-DC converters.
These features make the NTJD4158CT1G suitable for a wide range of electronic applications requiring efficient switching and control.

Package

The NTJD4158CT1G is packaged in a SO-8 (Small Outline) format, which is an 8-pin surface-mount device. This package type is designed for efficient space-saving and thermal performance in electronic applications.

Pinout

The NTJD4158CT1G is a dual N-channel MOSFET with a pin count of 8. It is designed for applications such as power management and switching.
Pin functions are as follows:
1. Gate 1 – Controls the first N-channel MOSFET.
2. Drain 1 – Drain terminal for the first N-channel MOSFET.
3. Source 1 – Source terminal for the first N-channel MOSFET.
4. Gate 2 – Controls the second N-channel MOSFET.
5. Drain 2 – Drain terminal for the second N-channel MOSFET.
6. Source 2 – Source terminal for the second N-channel MOSFET.
7. GND (optional, depending on package type) – Ground connection.
8. NC – Not connected (used for internal structure or layout purposes).
The device is typically used in low-voltage, high-speed switching applications.

Manufacturer

The NTJD4158CT1G is manufactured by ON Semiconductor, a global semiconductor company. ON Semiconductor designs and produces a wide range of products, including power management, analog, and mixed-signal devices, as well as sensors, connectivity, and logic products. The company serves various markets, including automotive, industrial, consumer electronics, and communications. ON Semiconductor is known for its focus on energy-efficient solutions and sustainability, aiming to enable smarter, cleaner, and more connected applications.

Application

The NTJD4158CT1G is a dual N-channel MOSFET commonly used in power management applications. Its primary areas of application include DC-DC converters, load switching, motor control, and power delivery systems. It is suitable for use in consumer electronics, automotive, and industrial devices where efficient switching and thermal performance are crucial.

Equivalent

The NTJD4158CT1G is a dual N-channel MOSFET. Equivalent products include the BSS138, 2N7000, and BS170. Ensure to check specific electrical characteristics like V_DS, I_D, R_DS(on), and package type for compatibility in your application.

Versand

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UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

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Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

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