NTJD4401NT1G

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NTJD4401NT1G

MOSFET 2N-CH 20V 630MA SOT363

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  • Fr. Teil #NTJD4401NT1G
  • Paket SC-88
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Spezifikationen

Package Tape & Reel (TR),Cut Tape (CT),Bulk
ProductStatus Active
FETType 2 N-Channel (Dual)
FETFeature Logic Level Gate
DraintoSourceVoltage(Vdss) 20V
Current-ContinuousDrain(Id)@25°C 630mA
RdsOn(Max)@IdVgs 375mOhm @ 630mA, 4.5V
Vgs(th)(Max)@Id 1.5V @ 250µA
GateCharge(Qg)(Max)@Vgs 3nC @ 4.5V
InputCapacitance(Ciss)(Max)@Vds 46pF @ 20V
Power-Max 270mW
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case 6-TSSOP, SC-88, SOT-363

Übersicht

Description

The NTJD4401NT1G is a high-performance N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for power management and switching applications. It features low on-resistance and fast switching speeds, making it suitable for use in a variety of electronic devices, including power supplies, motor drives, and DC-DC converters. The device can handle high voltage and current, allowing it to efficiently control power flow with minimal heat generation.
The "1G" in its designation typically indicates that it comes in a specific packaging configuration suitable for surface-mount applications. Its compact size and reliable performance make it a popular choice in both consumer electronics and industrial applications.
When selecting this MOSFET for a project, consider its voltage rating, current capacity, and thermal performance to ensure compatibility with your circuit design.

Features

The NTJD4401NT1G is a high-performance N-channel MOSFET designed for various applications, including power management and switching. Key features include:
1. Voltage Rating: It typically has a drain-source voltage (VDS) up to 40V, making it suitable for medium-voltage applications.
2. Current Capacity: The device can handle continuous drain currents of up to 30A, providing robust performance in demanding environments.
3. Low On-Resistance: The RDS(on) is typically low, around 0.025 ohms at a gate-source voltage (VGS) of 10V, which enhances efficiency by reducing power losses.
4. Fast Switching Speed: Offers fast switching capabilities, making it ideal for high-frequency applications.
5. Thermal Performance: Features a thermal resistance (RθJA) that supports effective heat dissipation, allowing for stable operation under high loads.
6. Package Type: Generally comes in a TO-220 package, facilitating easy mounting and heat management.
These features make the NTJD4401NT1G suitable for applications like DC-DC converters, motor drives, and other power-related circuits.

Package

The NTJD4401NT1G is packaged in a SOT-23 surface mount package. This compact package type is commonly used for transistors and other semiconductor devices, allowing for efficient space utilization on circuit boards.

Pinout

The NTJD4401NT1G is a N-channel MOSFET from ON Semiconductor with a total of 3 pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow from the drain to the source.

2. Drain (D): The drain pin connects to the load, where the current flows out of the MOSFET when it is turned on.
3. Source (S): This pin is connected to the ground or the negative side of the power supply, completing the circuit when the MOSFET is activated.
The device is designed for applications such as power management and switching. Its specifications include low R_DS(on) to ensure efficient operation.

Manufacturer

The NTJD4401NT1G is manufactured by ON Semiconductor, a global semiconductor company. ON Semiconductor specializes in designing and manufacturing a wide range of semiconductor solutions, including analog, power management, RF, and sensors. The company serves various industries such as automotive, industrial, communications, computing, and consumer electronics. Founded in 1999, ON Semiconductor has grown through strategic acquisitions and innovation, becoming a key player in the semiconductor market. Its products are essential for enabling energy-efficient designs and advanced technology applications.

Application

The NTJD4401NT1G is a dual N-channel MOSFET primarily used in power management applications. Its application areas include DC-DC converters, power supplies, motor control, and switching circuits. It is suitable for low-voltage applications, enabling efficient power switching in consumer electronics, automotive systems, and industrial automation.

Equivalent

The NTJD4401NT1G chip, a N-channel MOSFET, has several equivalent products, including:
1. BSS138 - Low voltage MOSFET.
2. 2N7000 - Popular small-signal N-channel MOSFET.
3. BS170 - Another similar small-signal MOSFET.
4. IRF520 - Higher power N-channel MOSFET, though with different ratings.
Always check specific datasheets for detailed specifications and ensure compatibility for your application.

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