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NTMFS005N10MCLT1G
SINGLE N-CHANNEL POWER MOSFET 10
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- Fr. Teil #NTMFS005N10MCLT1G
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- Datenblatt NTMFS005N10MCLT1G DataSheet
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Spezifikationen
| Supplier | onsemi |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 16A (Ta), 105A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 5.1mOhm @ 34A, 10V |
| Vgs(th)(Max)@Id | 3V @ 192µA |
| GateCharge(Qg)(Max)@Vgs | 55 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 4100 pF @ 50 V |
| PowerDissipation(Max) | 3W (Ta), 125W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 5-DFN (5x6) (8-SOFL) |
Übersicht
Description
This MOSFET is housed in a compact TO-220 package, which facilitates efficient heat dissipation and ease of mounting on printed circuit boards (PCBs). Its fast switching capabilities and low gate charge (Q_g) make it ideal for high-frequency applications, improving overall system efficiency.
The NTMFS005N10MCLT1G is also designed to manage thermal performance effectively, with a specified maximum junction temperature (T_j) of 150°C. Its robustness and efficiency make it a popular choice among engineers for designing reliable and energy-efficient electronic circuits.
Features
1. Voltage Rating: 100V maximum drain-source voltage (V_DS).
2. Current Rating: Continuous drain current (I_D) of 5.5A at 25°C.
3. R_DS(on): Low on-resistance of approximately 5 mΩ at V_GS = 10V, ensuring efficient power handling.
4. Gate Threshold Voltage: V_GS(th) typically between 1V to 2.5V, allowing for easy drive with lower voltage levels.
5. Package Type: Available in a compact DPAK package, suitable for space-constrained applications.
6. Fast Switching: Designed for high-speed operation, making it suitable for power management in DC-DC converters and motor drives.
7. Thermal Resistance: Low junction-to-ambient thermal resistance enhances heat dissipation.
These features make the NTMFS005N10MCLT1G an excellent choice for various applications in power electronics.
Package
Pinout
1. Gate (G): Controls the switching of the MOSFET.
2. Drain (D): The output terminal where current flows out.
3. Source (S): The input terminal where current flows in.
The specific pin configuration, typically in a TO-220 package, is:
- Pin 1: Gate
- Pin 2: Drain
- Pin 3: Source
Additional pins may include a tab or a separate terminal for heat dissipation in certain package configurations.
This MOSFET is designed for applications requiring high-speed switching and efficiency, commonly used in power management, motor control, and other electronic applications. Its specifications include a low on-resistance and a high voltage rating, making it suitable for various power applications.
Manufacturer
Application
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