NTMFS1D3N04XMT1G

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NTMFS1D3N04XMT1G

40V T10M IN S08FL PACKAGE

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Spezifikationen

Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 40A (Ta), 195A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 3.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 38.6 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2459 pF @ 25 V
Power Dissipation (Max) 90W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads

Übersicht

Description

The NTMFS1D3N04XMT1G is a N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for power applications. It features a maximum drain-source voltage (V_DS) of 40V and a continuous drain current (I_D) rating of up to 75A, making it suitable for high-efficiency switching applications. Its low on-resistance (R_DS(on)) value minimizes power loss and heat generation during operation, enhancing efficiency.
The device is commonly used in various applications, including DC-DC converters, motor drives, and power management systems. It is housed in a compact surface-mount package (DPAK), facilitating easier integration into circuit designs. The NTMFS1D3N04XMT1G also offers fast switching speeds, which are critical for modern electronic circuits requiring rapid response times.
Overall, this MOSFET is ideal for designers looking to optimize power efficiency and performance in their electronic applications.

Features

The NTMFS1D3N04XMT1G is an N-channel MOSFET designed for high-efficiency power applications. Key features include:
1. Voltage Rating: Supports a maximum drain-source voltage (VDS) of 40V.
2. Current Handling: Capable of handling continuous drain current up to 60A, making it suitable for high-power applications.
3. RDS(on): Low on-resistance (RDS(on)) typically around 1.6 mΩ at VGS = 10V, which minimizes conduction losses.
4. Gate Threshold Voltage: VGS(th) ranges from 1V to 2.5V, allowing for efficient switching with lower gate drive voltages.
5. Package Type: Comes in a TO-220 package, facilitating heat dissipation and ease of mounting in various applications.
6. Applications: Ideal for DC-DC converters, motor drives, and power management in consumer electronics and industrial equipment.
7. Thermal Resistance: Low thermal resistance enhances performance in demanding conditions.
These features make the NTMFS1D3N04XMT1G a robust choice for various power management solutions.

Package

The NTMFS1D3N04XMT1G is packaged in a DPAK (or TO-252) package type. This surface-mount package is designed for power applications, offering efficient thermal performance and optimized footprint for various electronic circuits.

Pinout

The NTMFS1D3N04XMT1G is a N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) with a pin count of 3. The primary functions of its pins are as follows:
1. Gate (G): Controls the MOSFET operation by applying a voltage. When a sufficient voltage is applied to this pin, the MOSFET turns on, allowing current to flow from drain to source.
2. Drain (D): This pin is where the main current flows from when the MOSFET is in the "on" state. It connects to the load, allowing current to pass through.
3. Source (S): This pin is connected to the ground or negative side of the power supply. It serves as the return path for the current flowing through the drain.
This device is typically used in power management applications, including switching power supplies and motor drives, due to its high efficiency and low on-resistance.

Manufacturer

The manufacturer of the NTMFS1D3N04XMT1G is ON Semiconductor. ON Semiconductor is a global supplier of semiconductor-based solutions, specializing in various markets such as automotive, industrial, and consumer electronics. The company focuses on providing energy-efficient solutions, including power management, analog, and digital products, as well as intelligent sensing technologies. It plays a significant role in the development of applications ranging from automotive systems to renewable energy and Internet of Things (IoT) devices.

Application

The NTMFS1D3N04XMT1G is a N-channel MOSFET primarily used in power management applications, including DC-DC converters, battery management systems, and motor control. Its low on-resistance and fast switching capabilities make it suitable for efficient power switching in consumer electronics, automotive applications, and renewable energy systems.

Equivalent

The NTMFS1D3N04XMT1G is a N-channel MOSFET. Equivalent alternatives include the IRLZ44N, BSS138, and FQP30N06L. When selecting an equivalent, ensure the voltage, current, and RDS(on) ratings match your application requirements. Always verify specifications in the datasheets for compatibility.

Versand

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Versandgebührenreferenz (DHL/FedEx):

DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.

von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.

Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

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