NTMFS4833NT1G

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NTMFS4833NT1G

MOSFET N-CH 30V 16A/156A 5DFN

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Spezifikationen

Package Tape & Reel (TR),Cut Tape (CT),Bulk
ProductStatus Obsolete
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 30 V
Current-ContinuousDrain(Id)@25°C 16A (Ta), 156A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 2mOhm @ 30A, 10V
Vgs(th)(Max)@Id 2.5V @ 250µA
GateCharge(Qg)(Max)@Vgs 88 nC @ 11.5 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 5600 pF @ 12 V
PowerDissipation(Max) 910mW (Ta), 125W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage 5-DFN (5x6) (8-SOFL)

Übersicht

Description

The NTMFS4833NT1G is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various power management applications. It features a low on-resistance (R_DS(on)), which allows for efficient power conversion and reduced heat generation during operation. This MOSFET is typically used in synchronous rectification, DC-DC converters, and load switching applications.
With a maximum drain-source voltage (V_DS) of 30V and a continuous drain current (I_D) of around 60A, it is suitable for medium voltage applications. Its small package size (DFN) allows for space-saving designs in compact electronic devices. The NTMFS4833NT1G also exhibits fast switching speeds, making it ideal for high-frequency applications.
Key specifications include a low gate threshold voltage, high input impedance, and robust thermal performance. Overall, the NTMFS4833NT1G is a reliable choice for engineers looking to enhance efficiency and performance in their electronic circuits.

Features

The NTMFS4833NT1G is an N-channel MOSFET designed for efficient switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, making it suitable for low-voltage applications.
2. Current Rating: The device can handle continuous drain currents of up to 62A at a temperature of 25°C.
3. On-Resistance: The R_DS(on) is low (approx. 10 mΩ at V_GS = 10V), which helps in reducing conduction losses.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges between 1V to 2.5V, allowing for efficient drive from low-voltage sources.
5. Package Type: It comes in a DPAK package, which is suitable for surface mounting and provides good thermal performance.
6. Fast Switching: The MOSFET features fast switching capabilities, making it ideal for applications in power management, DC-DC converters, and motor control.
These features make the NTMFS4833NT1G a versatile choice for various electronic applications requiring high efficiency and reliability.

Package

The NTMFS4833NT1G is packaged in a DPAK (TO-252) format. This package is designed for surface mounting and provides a compact footprint suitable for various applications in power management and switching.

Pinout

The NTMFS4833NT1G is a dual N-channel MOSFET housed in a 8-Pin SOIC (Small Outline Integrated Circuit) package. It features a total of 8 pins, which are used to connect the device in various circuit configurations.
Pin functions are as follows:
1. Source 1 (S1) - Connects to the source of the first N-channel MOSFET.
2. Gate 1 (G1) - Controls the gate of the first N-channel MOSFET.
3. Drain 1 (D1) - Connects to the drain of the first N-channel MOSFET.
4. Source 2 (S2) - Connects to the source of the second N-channel MOSFET.
5. Gate 2 (G2) - Controls the gate of the second N-channel MOSFET.
6. Drain 2 (D2) - Connects to the drain of the second N-channel MOSFET.
7. N/C (Not Connected) - These pins are typically not connected and may be used for thermal or mechanical purposes.
8. N/C (Not Connected) - Same as the above.
The device is commonly used in power management applications.

Manufacturer

The manufacturer of the NTMFS4833NT1G is ON Semiconductor. ON Semiconductor is a multinational company that specializes in semiconductor solutions. It focuses on providing a wide range of products, including power management, analog, and digital components, as well as custom solutions for various applications, such as automotive, industrial, and consumer electronics. The company is known for its innovative technologies that enhance energy efficiency and performance in electronic devices.

Application

The NTMFS4833NT1G is a N-channel MOSFET used in various applications, including power management systems, DC-DC converters, and motor control. It is suitable for use in synchronous rectification, load switching, and battery management systems due to its low on-resistance and fast switching capabilities. Additionally, it can be utilized in high-efficiency power supplies and portable electronic devices.

Equivalent

The NTMFS4833NT1G is an N-channel MOSFET. Equivalent products include the IRLZ44N, BSS138, and AOD4184. Always check the specific voltage, current ratings, and package type to ensure compatibility for your application.

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