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NTMFS4933NT1G
MOSFET N-CH 30V 20A/210A 5DFN
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- Fr. Teil #NTMFS4933NT1G
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- Datenblatt NTMFS4933NT1G DataSheet
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Spezifikationen
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta), 210A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 1.2mOhm @ 30A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 62.1 nC @ 4.5 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 10930 pF @ 15 V |
| Power Dissipation (Max) | 1.06W (Ta), 104W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Base Product Number | NTMFS4933 |
Übersicht
Description
This MOSFET operates with a maximum drain-source voltage (V_DS) of 30V and a continuous drain current (I_D) of up to 49A, enabling it to handle substantial power levels efficiently. Its small package size (DPAK) allows for space-saving designs in PCBs (Printed Circuit Boards). Additionally, the device is characterized by a low gate charge, which leads to reduced power consumption and enhanced performance.
Overall, the NTMFS4933NT1G is a versatile component ideal for applications in power supplies, motor drivers, and other circuits requiring efficient switching capabilities.
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, suitable for various low-voltage applications.
2. Current Handling: The device can handle a continuous drain current (I_D) of up to 49A, making it suitable for high-current applications.
3. R_DS(on): It offers a low on-resistance (R_DS(on)) of approximately 5.5 mΩ at V_GS = 10V, which enhances efficiency by reducing power loss.
4. Fast Switching: The NTMFS4933NT1G features fast switching speeds, ideal for applications like DC-DC converters, motor drivers, and load switching.
5. Thermal Performance: It comes in a DPAK package, which helps in efficient heat dissipation, supporting reliable operation even under high power conditions.
6. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) ranges from 1V to 2.5V, enabling low-voltage drive capability.
These attributes make the NTMFS4933NT1G suitable for various automotive and industrial applications.
Package
Pinout
1. Gate (G): This pin controls the MOSFET's on/off state. A voltage applied to this pin allows current to flow between the drain and source.
2. Drain (D): The drain pin is where the current enters the MOSFET when it is in the 'on' state.
3. Source (S): The source pin is where the current exits the MOSFET when it is conducting.
4. Tab (T): The tab serves as a heat sink and is typically connected to the source for thermal management.
The NTMFS4933NT1G is designed for high-efficiency power applications, featuring low on-resistance and fast switching capabilities. It is commonly used in power management and switching applications.
Manufacturer
Application
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Zahlungen
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