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NTMFS4C022NT1G
MOSFET N-CH 30V 30A/136A 5DFN
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- Fr. Teil #NTMFS4C022NT1G
- Paket SO-8FL
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Spezifikationen
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 30 V |
| Current-ContinuousDrain(Id)@25°C | 30A (Ta), 136A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 1.7mOhm @ 30A, 10V |
| Vgs(th)(Max)@Id | 2.2V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 45.2 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 3071 pF @ 15 V |
| PowerDissipation(Max) | 3.1W (Ta), 64W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 5-DFN (5x6) (8-SOFL) |
Übersicht
Description
Key specifications include a maximum drain-source voltage (V_DS) of 20V and a continuous drain current (I_D) rating of up to 4.5A, depending on the thermal conditions. Its fast switching speeds make it ideal for applications such as DC-DC converters, motor drivers, and other power electronics.
The device is housed in a compact surface-mount package (SO-8), facilitating easy integration into modern circuit designs. Its robust performance and reliability make the NTMFS4C022NT1G a popular choice among engineers looking to optimize efficiency and thermal management in their designs.
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 20V, making it suitable for low-voltage applications.
2. Current Rating: The continuous drain current (I_D) is rated at 4.3A, enabling efficient power handling.
3. Low On-Resistance: The on-resistance (R_DS(on)) is low, typically around 27 mΩ at V_GS = 10V, which helps reduce conduction losses.
4. Fast Switching Speed: Designed for quick switching times, enhancing performance in fast PWM applications.
5. Thermal Performance: Features a high thermal resistance rating (RθJA), allowing better heat dissipation and reliability.
6. Package: Available in a compact SO-8 package, facilitating easy integration into various circuit designs.
This MOSFET is commonly used in power supplies, motor drivers, and load switching applications due to its efficient performance and robust characteristics.
Package
Pinout
The pin configuration includes:
1. Gate (G): Controls the MOSFET's switching.
2. Drain (D): The output terminal where the load is connected.
3. Source (S): The input terminal that connects to ground in low-side switching.
The device is designed for low on-resistance and high-speed switching, making it suitable for various power-related applications. The NTMFS4C022NT1G is characterized by low gate threshold voltage, fast switching times, and high current capacity, enhancing its performance in power management systems.
Manufacturer
Application
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Zahlungen
Payment Methods
Die Zahlungsfrist ist 100% Prepaid.
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