NTMFS4C025NT1G

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NTMFS4C025NT1G

MOSFET N-CH 30V 20A/69A 5DFN

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Spezifikationen

Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 30 V
Current-ContinuousDrain(Id)@25°C 20A (Ta), 69A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 3.41mOhm @ 30A, 10V
Vgs(th)(Max)@Id 2.1V @ 250µA
GateCharge(Qg)(Max)@Vgs 26 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 1683 pF @ 15 V
PowerDissipation(Max) 2.55W (Ta), 30.5W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage 5-DFN (5x6) (8-SOFL)

Übersicht

Description

The NTMFS4C025NT1G is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency power management applications. It features low on-resistance (R_DS(on)), which reduces power losses and improves thermal performance. This device is suitable for applications such as DC-DC converters, motor drivers, and general-purpose switching.
Key specifications include a maximum drain-source voltage (V_DS) of 25V, and a continuous drain current (I_D) of up to 40A, depending on the thermal conditions. Its compact package, typically in a TO-220 or similar form factor, allows for easy integration into various circuits.
The NTMFS4C025NT1G is favored for its fast switching capabilities and robust reliability, making it an excellent choice for modern electronic designs requiring efficient power handling. It is commonly used in consumer electronics, automotive systems, and industrial applications. Proper thermal management and adherence to the maximum ratings are essential for optimal performance.

Features

The NTMFS4C025NT1G is an N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 25V, making it suitable for low-voltage applications.
2. Current Rating: Capable of handling continuous drain current (I_D) up to 40A, providing robust performance in various circuits.
3. R_DS(on): Features a low on-resistance (R_DS(on)) of around 4.5 mΩ at V_GS = 10V, which helps minimize power loss during operation.
4. Fast Switching: Designed for high-speed switching applications, enhancing efficiency in power management.
5. Thermal Performance: Its package allows for effective heat dissipation, ensuring reliable operation under load.
6. Packaging: Typically available in DPAK or similar surface-mount packages for easy integration in circuit designs.
These characteristics make the NTMFS4C025NT1G ideal for use in power converters, motor drives, and other applications requiring efficient switching and control.

Package

The NTMFS4C025NT1G is packaged in a TDFN (Thin Dual Flat No-lead) package.

Pinout

The NTMFS4C025NT1G is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with a pin count of 4. Its primary functions include switching, amplification, and voltage regulation in various electronic applications.
The pin configuration is as follows:
1. Gate (G): Controls the operation of the MOSFET by regulating the current flow between the drain and source.
2. Drain (D): The terminal through which the current flows out of the device.
3. Source (S): The terminal through which the current flows into the device.
4. Body (B): Internally connected to the source; not typically used as an external pin.
The NTMFS4C025NT1G is designed for high-speed switching applications and is commonly used in power management, motor control, and various digital circuits. Its low on-resistance and fast switching characteristics contribute to energy efficiency in electronic systems.

Manufacturer

The NTMFS4C025NT1G is manufactured by ON Semiconductor, a prominent semiconductor company. ON Semiconductor specializes in designing and manufacturing a wide range of semiconductor components, including power management solutions, sensors, and communication devices. The company serves various sectors, such as automotive, industrial, and consumer electronics, providing high-performance products that enable efficient energy management and connectivity in modern electronic systems. Established in 1999, ON Semiconductor has grown through strategic acquisitions and innovations, positioning itself as a key player in the global semiconductor market.

Application

The NTMFS4C025NT1G is an N-channel MOSFET primarily used in power management applications, including DC-DC converters, load switching, and battery management systems. Its low on-resistance and high-speed switching capabilities make it suitable for use in consumer electronics, automotive applications, and industrial equipment. Additionally, it is effective in synchronous rectification and power supply designs, enhancing efficiency and performance in various electronic systems.

Equivalent

The NTMFS4C025NT1G is a N-channel MOSFET. Equivalent products include the BSS138, IRLZ44N, and STP16NF06. Always verify specifications such as voltage, current, and Rds(on) to ensure compatibility for your specific application.

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