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NTMFS4C08NT1G
MOSFET N-CH 30V 9A/52A 5DFN
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- Fr. Teil #NTMFS4C08NT1G
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- Datenblatt NTMFS4C08NT1G DataSheet
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Spezifikationen
| Supplier | onsemi |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 30 V |
| Current-ContinuousDrain(Id)@25°C | 9A (Ta), 52A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 5.8mOhm @ 18A, 10V |
| Vgs(th)(Max)@Id | 2.1V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 18.2 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 1113 pF @ 15 V |
| PowerDissipation(Max) | 760mW (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 5-DFN (5x6) (8-SOFL) |
Übersicht
Description
The NTMFS4C08NT1G is housed in a TO-220 package, allowing for effective heat dissipation and easy integration into circuits. Its low gate threshold voltage (VGS(th)) enables it to turn on quickly, improving switching performance. This MOSFET is characterized by fast switching speeds and high thermal stability, which contribute to its reliability in demanding environments.
Overall, the NTMFS4C08NT1G is an essential component for engineers and designers looking to optimize power efficiency and performance in electronic systems.
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 40V, allowing it to handle moderate voltage levels.
2. Current Rating: The continuous drain current (I_D) is rated up to 80A, making it suitable for high-current applications.
3. On-Resistance: It boasts a low R_DS(on) value, typically around 0.0045Ω, which minimizes power loss during operation.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) is between 1V to 3V, enabling efficient switching.
5. Package Type: It is available in a TO-220 package, which aids in heat dissipation and allows for easier mounting on heat sinks.
6. Fast Switching Speed: The device is optimized for high-speed applications, essential for efficient operation in switching power supplies and motor drivers.
7. Thermal Resistance: The MOSFET features low thermal resistance for improved thermal management.
These attributes make the NTMFS4C08NT1G ideal for power management and control in automotive, industrial, and consumer electronics applications.
Package
Pinout
The pins are typically configured as follows:
1. Gate (G) - Controls the MOSFET's switching.
2. Drain (D) - Connects to the load.
3. Source (S) - Connects to ground or the negative side of the circuit.
4. Body (B) - Internal diode connection, usually tied to the source.
In addition to these primary pins, the device may have other pins for enhanced functionality or thermal management, but the essential operation revolves around the gate, drain, and source. The NTMFS4C08NT1G features low on-resistance and fast switching speeds, making it ideal for applications in power supplies, motor control, and more.
Manufacturer
Application
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Versand
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Zahlungen
Payment Methods
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