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NTMFS5C410NLT1G
MOSFET N-CH 40V 46A/302A 5DFN
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- Fr. Teil #NTMFS5C410NLT1G
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Spezifikationen
| Package | Tape & Reel (TR),Cut Tape (CT),Bulk |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 40 V |
| Current-ContinuousDrain(Id)@25°C | 46A (Ta), 302A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 0.9mOhm @ 50A, 10V |
| Vgs(th)(Max)@Id | 2V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 143 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 8862 pF @ 25 V |
| PowerDissipation(Max) | 3.2W (Ta), 139W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 5-DFN (5x6) (8-SOFL) |
Übersicht
Description
Key specifications include a low on-resistance (R_DS(on)) in the range of 4.1 mΩ, which enables minimal power loss during operation, and a fast switching speed that enhances overall circuit efficiency. The package is typically in a TO-220 or similar form factor, allowing for easy thermal management.
This MOSFET is ideal for applications requiring high power density and efficiency, such as renewable energy systems, battery management, and automotive electronics. Overall, the NTMFS5C410NLT1G is a versatile component for modern electronic designs, offering robust performance in demanding environments.
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 40V, making it suitable for various power management applications.
2. Current Rating: The device supports continuous drain current (I_D) of up to 60A, allowing it to handle significant power loads.
3. R_DS(on): It offers a low on-resistance (R_DS(on)) of approximately 8.5 mΩ at V_GS of 10V, which minimizes conduction losses and enhances efficiency.
4. Fast Switching Speed: The device is optimized for fast switching, reducing transition losses in applications such as DC-DC converters and motor control.
5. Thermal Performance: It features a robust thermal performance with a maximum junction temperature of 175°C, supporting high-temperature applications.
6. Package: Housed in a DPAK package, it provides efficient thermal dissipation and space-saving design.
Overall, the NTMFS5C410NLT1G is ideal for automotive, industrial, and consumer electronics applications where efficiency and reliability are critical.
Package
Pinout
Pin Functions:
1. Gate (G): Controls the MOSFET operation; applying a voltage turns the device on or off.
2. Drain (D): The terminal where the output voltage is taken; current flows out of this pin when the device is on.
3. Source (S): Connects to ground or the lower potential in the circuit; current flows into this pin when the device is on.
4. Others: In a typical package, remaining pins may include a thermal pad and potentially additional drain and source pins for better performance and thermal management.
This MOSFET is widely used in power management applications due to its low on-resistance and fast switching capabilities.
Manufacturer
Application
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Zahlungen
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