NTMFS5C410NT1G

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NTMFS5C410NT1G

NTMFS5C410N - SINGLE N-CHANNEL P

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  • Fr. Teil #NTMFS5C410NT1G
  • Paket SO-8
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Spezifikationen

Package Bulk
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 40 V
Current-ContinuousDrain(Id)@25°C 46A (Ta), 300A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 0.92mOhm @ 50A, 10V
Vgs(th)(Max)@Id 3.5V @ 250µA
GateCharge(Qg)(Max)@Vgs 86 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 6100 pF @ 25 V
PowerDissipation(Max) 3.9W (Ta), 166W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount
SupplierDevicePackage 5-DFN (5x6) (8-SOFL)

Übersicht

Description

The NTMFS5C410NT1G is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power management applications. It features a low on-resistance (R_DS(on)) value, which allows it to efficiently handle high currents with minimal power loss. Key specifications include a maximum drain-source voltage (V_DS) of 40V and a continuous drain current (I_D) rating of up to 50A, making it suitable for various applications such as power supplies, motor drivers, and DC-DC converters.
The device has a fast switching speed, contributing to improved efficiency in high-frequency applications. It is housed in a compact SO-8 package, which facilitates easy integration into circuit designs with space constraints. The NTMFS5C410NT1G is often favored in consumer electronics, automotive, and industrial applications due to its reliability and thermal performance. Overall, it is a versatile component for engineers looking to optimize power management solutions.

Features

The NTMFS5C410NT1G is an N-channel MOSFET designed for high-efficiency power management applications. Key features include:
- Voltage Rating: Supports a maximum drain-source voltage (V_DS) of 40V.
- Current Rating: Continuous drain current (I_D) of up to 50A, enabling robust performance in various applications.
- R_DS(on): Low on-resistance of approximately 4.5 mΩ, which helps in reducing power losses during operation.
- Gate Threshold Voltage (V_GS(th)): Typically ranges from 2V to 4V, allowing for efficient switching.
- Package Type: Available in a DPAK package, which aids in thermal dissipation and compact designs.
- Fast Switching Speed: Suitable for applications requiring rapid on/off switching, enhancing efficiency.
- Applications: Commonly used in DC-DC converters, power management systems, and motor control circuits.
Overall, the NTMFS5C410NT1G is ideal for various power applications, emphasizing efficiency and performance.

Package

The NTMFS5C410NT1G is packaged in a DPAK (TO-252) package type, which is a surface-mount package commonly used for power MOSFETs.

Pinout

The NTMFS5C410NT1G is a N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) with a pin count of 5. Its primary functions include switching and amplification in electronic circuits. Key specifications include a maximum drain-source voltage (V_DS) of 40V, a maximum continuous drain current (I_D) of 60A, and a low on-resistance (R_DS(on)) of around 0.0065 ohms at V_GS = 10V.
The pin configuration typically consists of the following:
1. Gate (G) - Controls the operation of the MOSFET.
2. Drain (D) - Connected to the load and carries the current out.
3. Source (S) - Connected to ground or the negative side of the power supply.
4. Drain (D) - An additional drain pin for improved thermal performance.
5. Source (S) - An additional source pin for improved thermal performance.
This device is widely used in applications such as power management, motor control, and DC-DC converters.

Manufacturer

The NTMFS5C410NT1G is manufactured by ON Semiconductor, a global semiconductor company. ON Semiconductor specializes in designing and manufacturing a wide range of semiconductor components, including power management, analog devices, and automotive solutions. The company serves various industries, such as automotive, communications, computing, consumer electronics, and industrial applications. ON Semiconductor is known for its focus on energy efficiency and sustainability in its product offerings, contributing to advancements in power management and technology.

Application

The NTMFS5C410NT1G is a N-channel MOSFET primarily used in power management applications. Its key application areas include DC-DC converters, power supplies, motor control, and automotive systems. It is suitable for high-efficiency switching applications due to its low on-resistance and fast switching speeds, making it ideal for use in renewable energy systems and battery management solutions.

Equivalent

The NTMFS5C410NT1G is a N-channel MOSFET. Equivalent products include the IRF3205, IRF250, and BSS138. It's essential to compare specifications like V_DS, I_D, R_DS(on), and package types to ensure compatibility. Always refer to the manufacturer’s datasheet for detailed comparisons.

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Versandgebührenreferenz (DHL/FedEx):

DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.

von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.

Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

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