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NTMFS5C430NLT1G
MOSFET N-CH 40V 200A 5DFN
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- Fr. Teil #NTMFS5C430NLT1G
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Spezifikationen
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 40 V |
| Current-ContinuousDrain(Id)@25°C | 200A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 1.5mOhm @ 50A, 10V |
| Vgs(th)(Max)@Id | 2V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 70 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 4300 pF @ 20 V |
| PowerDissipation(Max) | 3.8W (Ta), 110W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 5-DFN (5x6) (8-SOFL) |
Übersicht
Description
Its key applications include DC-DC converters, power supply circuits, and various other power switching applications due to its high-speed performance and thermal stability. The MOSFET is packaged in a surface-mount format (DPAK), making it suitable for compact designs.
Additionally, the NTMFS5C430NLT1G is characterized by fast switching speeds, making it ideal for applications requiring rapid on-off control. Its robust design and efficiency make it a popular choice among engineers for modern electronic devices.
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, making it suitable for various low-voltage applications.
2. Current Rating: It can handle a continuous drain current (I_D) up to 35A, facilitating robust performance in demanding conditions.
3. R_DS(on): The on-resistance is low (typically around 5.6 mΩ), which enhances efficiency by minimizing conduction losses.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) ranges from 1V to 2.5V, allowing for easy drive with standard logic levels.
5. Package: It comes in a TO-220 package, providing effective thermal management due to its larger surface area.
6. Fast Switching: The MOSFET is optimized for fast switching speeds, making it ideal for applications such as synchronous rectification and power supplies.
Overall, the NTMFS5C430NLT1G is a versatile component suitable for various electronic applications requiring high efficiency and reliability.
Package
Pinout
The pin configuration and their functions are as follows:
1. Gate (G) - Controls the MOSFET's on/off state.
2. Drain (D) - Connects to the load; current flows out from here when the MOSFET is on.
3. Source (S) - Connects to ground or the negative side of the voltage supply; current flows into the source when the MOSFET is on.
4. Body (Substrate) - Internally connected to the source; typically not accessible externally.
The device is known for its low on-resistance and fast switching capabilities, making it suitable for high-efficiency applications in power supplies, motor drives, and other electronic circuits.
For exact pin assignments and additional specifications, refer to the manufacturer's datasheet.
Manufacturer
Application
Equivalent
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Zahlungen
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