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NTMFS5C628NLT1G
MOSFET N-CH 60V 5DFN
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- Fr. Teil #NTMFS5C628NLT1G
- Paket SO-8FL
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Spezifikationen
| Package | Tape & Reel (TR),Cut Tape (CT),Bulk |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 60 V |
| Current-ContinuousDrain(Id)@25°C | 15A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 2.4mOhm @ 50A, 10V |
| Vgs(th)(Max)@Id | 2V @ 135µA |
| GateCharge(Qg)(Max)@Vgs | 52 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 3600 pF @ 25 V |
| PowerDissipation(Max) | 3.7W (Ta), 110W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 5-DFN (5x6) (8-SOFL) |
Übersicht
Description
With a compact SO-8 package, the NTMFS5C628NLT1G is ideal for space-constrained designs while providing excellent thermal performance. Its fast switching speeds and high reliability make it a preferred choice for modern electronic designs requiring robust power handling and efficiency. The device is also RoHS compliant, ensuring it meets environmental regulations.
Overall, the NTMFS5C628NLT1G is a versatile and efficient N-channel MOSFET suitable for a wide range of applications in power electronics.
Features
1. Voltage Rating: It operates with a maximum drain-source voltage (V_DS) of 60V, making it suitable for medium-voltage applications.
2. Current Rating: The device can handle continuous drain currents up to 60A, providing robust performance in demanding conditions.
3. R_DS(on): It has a low on-resistance (R_DS(on)) of approximately 5.5 mΩ, which helps minimize power losses and improve efficiency in power conversion applications.
4. Package: The MOSFET is available in a TO-220 package, allowing for efficient heat dissipation.
5. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) range is around 2V to 4V, enabling easy drive with standard gate voltages.
6. High-Speed Switching: It supports fast switching speeds, making it suitable for applications like DC-DC converters and motor control.
Overall, the NTMFS5C628NLT1G is optimized for efficiency, thermal performance, and versatility in power management solutions.
Package
Pinout
1. Gate (G): Controls the switching of the MOSFET on and off.
2. Drain (D): The terminal through which the current flows out of the device.
3. Source (S): The terminal through which the current flows into the device.
In the NTMFS5C628NLT1G, the pin configuration typically consists of two terminals for the drain and source, with one terminal for the gate control. This MOSFET is optimized for low on-resistance and high-speed switching applications, making it suitable for power converters and other electronic circuits. Always refer to the manufacturer's datasheet for detailed specifications and pin configurations.
Manufacturer
Application
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Zahlungen
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