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NTR1P02LT1G
MOSFET P-CH 20V 1.3A SOT23-3
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- Fr. Teil #NTR1P02LT1G
- Paket SOT-23
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Spezifikationen
| Package | Tape & Reel (TR),Cut Tape (CT),Bulk |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 20 V |
| Current-ContinuousDrain(Id)@25°C | 1.3A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 2.5V, 4.5V |
| RdsOn(Max)@IdVgs | 220mOhm @ 750mA, 4.5V |
| Vgs(th)(Max)@Id | 1.25V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 5.5 nC @ 4 V |
| Vgs(Max) | ±12V |
| InputCapacitance(Ciss)(Max)@Vds | 225 pF @ 5 V |
| PowerDissipation(Max) | 400mW (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | SOT-23-3 (TO-236) |
Übersicht
Description
Key specifications often include a maximum drain-source voltage, a specific continuous drain current rating, and a low threshold voltage, which enhances its performance in low-voltage circuits. MOSFETs like the NTR1P02LT1G are widely used in consumer electronics, automotive systems, and industrial applications due to their efficiency and reliability. When designing circuits, it's essential to refer to the datasheet for detailed electrical characteristics and application guidelines.
Features
1. Voltage Rating: It supports a maximum drain-source voltage (V_DS) of 20V, making it suitable for low-voltage applications.
2. Current Rating: The continuous drain current (I_D) is rated at 1.9A, allowing it to handle moderate loads efficiently.
3. R_DS(on): It boasts a low on-resistance (R_DS(on)) of approximately 25 mΩ at V_GS of 10V, ensuring minimal power loss during operation.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 1V to 2.5V, enabling it to turn on with lower gate voltages.
5. Package: It comes in a compact SOT-23 package, facilitating space-saving designs in electronic circuits.
6. Fast Switching: The device supports fast switching speeds, beneficial for high-frequency applications.
Overall, the NTR1P02LT1G is suitable for applications in load switching, power management circuits, and other electronic devices requiring efficient MOSFET performance.
Package
Pinout
The pinout is as follows:
1. Gate (G): Controls the on/off state of the MOSFET.
2. Drain (D): The terminal through which current flows out of the MOSFET when it is turned on.
3. Source (S): The terminal through which current flows into the MOSFET.
This device is designed for low-voltage applications, offering features such as low gate threshold voltage and low on-resistance, making it suitable for usage in power management circuits, battery-operated devices, and other electronic applications.
Manufacturer
Application
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Zahlungen
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Die Zahlungsfrist ist 100% Prepaid.
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