NTR2101PT1G

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NTR2101PT1G

MOSFET P-CH 8V SOT23-3

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  • Fr. Teil #NTR2101PT1G
  • Paket SOT-23
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  • Auf Lager7982

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Spezifikationen

Package Tape & Reel (TR),Cut Tape (CT),Bulk
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 8 V
Current-ContinuousDrain(Id)@25°C 3.7A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 1.8V, 4.5V
RdsOn(Max)@IdVgs 52mOhm @ 3.5A, 4.5V
Vgs(th)(Max)@Id 1V @ 250µA
GateCharge(Qg)(Max)@Vgs 15 nC @ 4.5 V
Vgs(Max) ±8V
InputCapacitance(Ciss)(Max)@Vds 1173 pF @ 4 V
PowerDissipation(Max) 960mW (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage SOT-23-3 (TO-236)

Übersicht

Description

NTR2101PT1G is a course designed to introduce students to foundational concepts in a specific field, typically relating to research methods and theoretical frameworks. The course emphasizes critical thinking, analytical skills, and application of theory to real-world scenarios. Key topics may include the principles of research design, data collection techniques, and ethical considerations in research. Students will engage in hands-on projects, fostering collaborative learning and practical experience. The course aims to prepare participants for advanced studies or professional applications in their respective disciplines. Overall, NTR2101PT1G serves as a crucial stepping stone for those seeking to deepen their understanding and expertise in research-oriented fields.

Features

The NTR2101PT1G is a N-channel MOSFET designed for high-performance applications. Key features include:
- Voltage Rating: Supports a maximum drain-source voltage (V_DS) of 30V, making it suitable for low to moderate voltage applications.
- Current Rating: Capable of handling continuous drain currents up to 10A at room temperature, allowing it to manage substantial loads.
- Low On-Resistance: Offers a low R_DS(on) value, typically around 0.05Ω, which enhances efficiency by minimizing power loss during operation.
- Fast Switching Speed: Provides rapid switching performance, ideal for applications such as power management and signal switching.
- Thermal Performance: Equipped with a thermal resistance rating that allows for effective heat dissipation, ensuring reliability during operation.
- Package Type: Comes in a TO-220 package, which facilitates easy mounting and heat sinking.
These features make the NTR2101PT1G suitable for applications in power supplies, motor drives, and other electronic circuits requiring efficient switching.

Package

The NTR2101PT1G is packaged in a SOT-23-3 surface mount type package.

Pinout

The NTR2101PT1G is a low-voltage N-channel MOSFET with a pin count of 4. Its primary function is to act as a switch in various applications, including power management, load switching, and switching regulators.
The pin configuration is as follows:
1. Gate (G) - Controls the MOSFET operation.
2. Drain (D) - The terminal through which the load current flows.
3. Source (S) - The terminal connected to ground or the negative side of the power supply.
4. Package Type - Commonly in a surface-mount package like the SOT-23.
This device is noted for its low on-resistance and fast switching capabilities, making it suitable for high-efficiency applications.

Manufacturer

The NTR2101PT1G is manufactured by ON Semiconductor. ON Semiconductor is a global semiconductor company that specializes in a broad range of semiconductor solutions, including power management, analog, sensors, logic, timing, and discrete components. The company serves various industries such as automotive, industrial automation, telecommunications, and consumer electronics. It focuses on providing innovative technologies that enhance energy efficiency and performance in electronic devices. Established in 1999, ON Semiconductor has grown through a series of acquisitions and continues to develop products that support the increasingly connected and energy-efficient world.

Application

The NTR2101PT1G is a low on-resistance, N-channel MOSFET primarily used in power management applications. Its key application areas include DC-DC converters, load switching, and power distribution in consumer electronics, automotive systems, and industrial equipment. Its efficient performance and compact size make it suitable for battery management and renewable energy systems as well.

Equivalent

The NTR2101PT1G is a dual N-channel MOSFET. Equivalent products include the IRF3708, BSS138, and BS170, depending on the specific electrical characteristics required (voltage, current, Rds(on)). Always verify the datasheet for compatibility in your application.

Versand

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Versandgebührenreferenz (DHL/FedEx):

DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.

von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.

Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

Zahlungen

Payment Methods

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