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NTR4101PT1G
MOSFET P-CH 20V 1.8A SOT23-3
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- Fr. Teil #NTR4101PT1G
- Paket SOT23-3
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Spezifikationen
| Package | Tape & Reel (TR),Cut Tape (CT),Bulk |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 20 V |
| Current-ContinuousDrain(Id)@25°C | 1.8A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 1.8V, 4.5V |
| RdsOn(Max)@IdVgs | 85mOhm @ 1.6A, 4.5V |
| Vgs(th)(Max)@Id | 1.2V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 8.5 nC @ 4.5 V |
| Vgs(Max) | ±8V |
| InputCapacitance(Ciss)(Max)@Vds | 675 pF @ 10 V |
| PowerDissipation(Max) | 420mW (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | SOT-23-3 (TO-236) |
Übersicht
Description
Key features often include a maximum drain-source voltage (V_DS) rating, low gate threshold voltage, and high thermal performance, making it ideal for applications such as power supplies, motor drivers, and inverters. The device is packaged in a surface-mount format, which allows for compact designs and ease of integration into modern electronic assemblies.
Overall, the NTR4101PT1G is a versatile and reliable component for engineers looking to enhance the efficiency and performance of their electronic designs. Always refer to the datasheet for detailed specifications and operating conditions.
Features
- Voltage Rating: It supports a maximum drain-source voltage (VDS) of 30V.
- Current Capacity: The device can handle continuous drain currents up to 55A, making it suitable for high-power applications.
- Low ON Resistance: With a typical RDS(on) of 12 mΩ at a gate-source voltage (VGS) of 10V, it ensures efficient operation with minimal power loss.
- Fast Switching: The MOSFET is designed for rapid switching, which is advantageous in high-frequency applications.
- Thermal Performance: It has a high thermal stability, allowing it to operate efficiently under varying temperatures.
- Package Type: The NTR4101PT1G is housed in a TO-220 package, facilitating easy heatsinking and assembly in many designs.
These features make the NTR4101PT1G suitable for applications in power supplies, motor drives, and other electronic circuits requiring efficient power management.
Package
Pinout
1. Gate (G) - Controls the MOSFET operation.
2. Drain (D) - The output terminal where the load is connected.
3. Source (S) - The input terminal that connects to the ground or the lower potential side of the load.
4. Substrate (B) - Typically connected to the source, used for internal biasing.
This device offers a maximum drain-source voltage (V_DS) of 30V and a continuous drain current (I_D) of up to 9.2A, making it suitable for power management and switching applications in various electronic circuits.
Manufacturer
Application
Equivalent
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Zahlungen
Payment Methods
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