NTS4101PT1G

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NTS4101PT1G

MOSFET P-CH 20V 1.37A SC70-3

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  • Fr. Teil #NTS4101PT1G
  • Paket SC-70-3
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Spezifikationen

Package Tape & Reel (TR),Cut Tape (CT),Bulk
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 20 V
Current-ContinuousDrain(Id)@25°C 1.37A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 2.5V, 4.5V
RdsOn(Max)@IdVgs 120mOhm @ 1A, 4.5V
Vgs(th)(Max)@Id 1.5V @ 250µA
GateCharge(Qg)(Max)@Vgs 9 nC @ 4.5 V
Vgs(Max) ±8V
InputCapacitance(Ciss)(Max)@Vds 840 pF @ 20 V
PowerDissipation(Max) 329mW (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage SC-70-3 (SOT323)

Übersicht

Description

NTS4101PT1G is a specific part number for a type of integrated circuit (IC) manufactured by ON Semiconductor. It is typically categorized as a low dropout (LDO) linear voltage regulator, which is used to provide a stable output voltage from a higher input voltage with minimal loss of power.
Key features of the NTS4101PT1G include:
- Input Voltage Range: It can typically handle a range of input voltages, making it suitable for various applications.
- Output Current: It can supply a specified maximum output current, which is important for powering devices.
- Low Dropout Voltage: The LDO design allows for efficient operation even when the input voltage is close to the output voltage.
- Thermal Protection: It may incorporate thermal shutdown features to prevent overheating.
This component is commonly used in consumer electronics, automotive applications, and industrial devices to ensure reliable power management. For specific datasheets or application notes, refer to ON Semiconductor's official resources.

Features

The NTS4101PT1G is a high-performance N-channel MOSFET designed for various applications, including power management and switching. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 30V, making it suitable for low to moderate voltage applications.
2. Current Rating: The device can handle a continuous drain current (ID) of up to 30A, which allows for efficient power delivery.
3. RDS(on): It boasts a low on-resistance (RDS(on)) of approximately 10 mΩ at a gate voltage (VGS) of 10V, ensuring minimal power loss during operation.
4. Gate Threshold Voltage: The gate threshold voltage (VGS(th)) ranges from 1V to 2.5V, enabling easy driving in low-voltage circuits.
5. Package: It comes in a compact TO-220 package, facilitating thermal management and easy integration into designs.
6. Speed: Fast switching capabilities make it suitable for high-frequency applications.
Overall, the NTS4101PT1G is a reliable choice for power electronics, offering high efficiency and robust performance.

Package

The NTS4101PT1G is packaged in a SOT-23 (Surface-Mount) form factor.

Pinout

The NTS4101PT1G is a dual N-channel MOSFET housed in a PowerDFN package with a pin count of 8. This device is designed for high-density power management applications.
Pin Functions:
1. Gate 1 (G1) - Controls the first N-channel MOSFET.
2. Drain 1 (D1) - Connects to the drain of the first MOSFET.
3. Source 1 (S1) - Connects to the source of the first MOSFET.
4. Gate 2 (G2) - Controls the second N-channel MOSFET.
5. Drain 2 (D2) - Connects to the drain of the second MOSFET.
6. Source 2 (S2) - Connects to the source of the second MOSFET.
7. Common Source (CS) - Shared source connection for both MOSFETs.
8. Common Drain (CD) - Shared drain connection for both MOSFETs.
This device is typically used in applications like power switching and voltage regulation.

Manufacturer

The NTS4101PT1G is manufactured by ON Semiconductor, a global semiconductor company known for designing and manufacturing a wide range of electronic components, including integrated circuits, discrete devices, and sensors. ON Semiconductor serves various industries such as automotive, industrial, telecommunications, consumer electronics, and computing. The company focuses on providing energy-efficient solutions and has a strong commitment to innovation and technology development. Headquartered in Phoenix, Arizona, ON Semiconductor operates worldwide and is recognized for its contributions to advancing semiconductor technology.

Application

The NTS4101PT1G is a high-performance N-channel MOSFET used in various applications including power management, DC-DC converters, motor control, and load switching. Its low on-resistance and fast switching capabilities make it suitable for consumer electronics, automotive systems, and industrial automation. Additionally, it is often employed in power supplies and renewable energy systems for efficient energy conversion and management.

Equivalent

The NTS4101PT1G is a dual N-channel MOSFET. Equivalent products include the AO3401, BSS138, and 2N7000, which may vary in specifications like V_DS, I_D, and R_DS(on). Always check the datasheets for exact parameters to ensure compatibility for your specific application.

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