NTZD3155CT1G

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NTZD3155CT1G

MOSFET N/P-CH 20V SOT-563

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Spezifikationen

Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Active
FETType N and P-Channel
FETFeature Logic Level Gate
DraintoSourceVoltage(Vdss) 20V
Current-ContinuousDrain(Id)@25°C 540mA, 430mA
RdsOn(Max)@IdVgs 550mOhm @ 540mA, 4.5V
Vgs(th)(Max)@Id 1V @ 250µA
GateCharge(Qg)(Max)@Vgs 2.5nC @ 4.5V
InputCapacitance(Ciss)(Max)@Vds 150pF @ 16V
Power-Max 250mW
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case SOT-563, SOT-666

Übersicht

Description

The NTZD3155CT1G is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power management applications. It features a low on-resistance and fast switching capabilities, making it suitable for high-efficiency power conversion tasks. With a maximum drain-source voltage (Vds) typically around 30V and a continuous drain current (Id) of up to 55A, it is commonly used in applications such as DC-DC converters, motor drivers, and power management circuits.
The device is encapsulated in a compact TO-220 package, facilitating effective heat dissipation. Its low gate threshold voltage enhances compatibility with various control circuits. Additionally, the NTZD3155CT1G is characterized by its robust construction and reliability, making it a favored choice for electronic designers seeking efficient and effective power solutions.

Features

The NTZD3155CT1G is a N-channel MOSFET designed for power management applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 55V, making it suitable for various high-voltage applications.
2. Current Rating: It can handle continuous drain currents up to 60A, enabling it to manage significant power loads.
3. Low RDS(on): The device features a low on-state resistance (RDS(on)), typically around 5.6 mΩ at VGS = 10V, which minimizes conduction losses and improves efficiency.
4. Fast Switching Speed: Optimized for fast switching applications, making it suitable for high-frequency designs.
5. Thermal Management: Designed with a TO-220 package, it provides effective heat dissipation for enhanced reliability.
6. Gate Threshold Voltage: Gate threshold voltage (VGS(th)) is typically between 2-4V, allowing for operation with lower gate drive voltages.
These characteristics make the NTZD3155CT1G ideal for applications in power supplies, motor drivers, and various switching applications.

Package

The NTZD3155CT1G is packaged in a DPAK (also known as TO-252) format, which is a surface-mount package designed for power applications. It features a low thermal resistance for efficient heat dissipation.

Pinout

The NTZD3155CT1G is a N-channel MOSFET with a total of 8 pins. The pin configuration and their functions are as follows:
1. Gate (G) - Controls the MOSFET operation, enabling or disabling current flow.
2. Drain (D) - The terminal where the output current flows out.
3. Source (S) - The terminal where the input current enters the MOSFET.
The remaining pins are typically used for physical mounting and heat dissipation. This MOSFET is designed for high-efficiency power management applications and has features such as low on-resistance and high-speed switching capabilities. The NTZD3155CT1G is commonly used in power supply circuits, motor drivers, and other applications requiring efficient load control.

Manufacturer

The NTZD3155CT1G is manufactured by ON Semiconductor, a global supplier of semiconductor-based solutions. ON Semiconductor specializes in a wide range of products, including power management, analog, and discrete semiconductors. The company focuses on providing energy-efficient technologies and is heavily involved in industries such as automotive, industrial, communications, and consumer electronics. Established in 1999, ON Semiconductor has grown through acquisitions and innovation, positioning itself as a key player in the semiconductor market. Their products are designed to meet the increasing demand for efficiency and performance in electronic devices.

Application

The NTZD3155CT1G is a N-channel MOSFET primarily used in power management applications, including DC-DC converters, power supplies, and motor control. It is ideal for switching applications due to its low on-resistance and fast switching capabilities. Common application areas include automotive systems, consumer electronics, and industrial automation, where efficient power handling and thermal performance are crucial.

Equivalent

The NTZD3155CT1G is a N-channel MOSFET. Equivalent products include:
1. BSS138 - for lower voltage applications.
2. IRLZ44N - for higher current applications.
3. AO3400 - similar characteristics with lower RDS(on).
4. Si2302 - another low-voltage alternative.
Always check the specific datasheets for compatibility based on voltage, current ratings, and package type.

Versand

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Versandgebührenreferenz (DHL/FedEx):

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UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

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Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

Zahlungen

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