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NVGS3443T1G
MOSFET P-CH 20V 3.1A 6TSOP
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- Fr. Teil #NVGS3443T1G
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- Datenblatt NVGS3443T1G DataSheet
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Spezifikationen
| Supplier | onsemi |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | Automotive, AEC-Q101 |
| ProductStatus | Obsolete |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 20 V |
| Current-ContinuousDrain(Id)@25°C | 3.1A (Ta) |
| RdsOn(Max)@IdVgs | 65mOhm @ 4.4A, 4.5V |
| Vgs(th)(Max)@Id | 1.5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 15 nC @ 4.5 V |
| InputCapacitance(Ciss)(Max)@Vds | 565 pF @ 5 V |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 6-TSOP |
Übersicht
Description
The NVGS3443T1G is known for its low noise performance, high input impedance, and low output impedance, making it ideal for applications in audio systems, sensors, and instrumentation. It comes in a compact package, ensuring efficient use of board space. Additionally, the device is designed with thermal stability in mind, reducing the risk of distortion or degradation under varying temperatures. Overall, the NVGS3443T1G is a versatile choice for engineers looking to implement reliable and efficient analog signal processing in their designs.
Features
1. Voltage Rating: Supports a drain-source voltage (V_DS) up to 30V.
2. Current Rating: Capable of handling continuous drain currents (I_D) up to 25A.
3. R_DS(on): Low on-resistance, typically around 12 mΩ, which reduces power loss and improves efficiency.
4. Fast Switching: Designed for high-speed switching applications, enhancing overall system responsiveness.
5. Thermal Performance: Offers good thermal stability with a low thermal resistance, ensuring effective heat dissipation.
6. Package Type: Available in a surface-mount SOIC-8 package, suitable for compact designs.
7. Gate Threshold Voltage: Features a low gate threshold, enabling operation with lower gate drive voltages.
These characteristics make the NVGS3443T1G ideal for use in DC-DC converters, power switching applications, and other electronic circuits requiring efficient power management.
Package
Pinout
The pin configuration is as follows:
1. Gate 1 (G1) - Control for the first N-channel MOSFET.
2. Drain 1 (D1) - Drain terminal for the first N-channel MOSFET.
3. Source 1 (S1) - Source terminal for the first N-channel MOSFET.
4. Gate 2 (G2) - Control for the second N-channel MOSFET.
5. Drain 2 (D2) - Drain terminal for the second N-channel MOSFET.
6. Source 2 (S2) - Source terminal for the second N-channel MOSFET.
7. Drain 1 (D1) - Common drain for both MOSFETs.
8. Source 2 (S2) - Common source for both MOSFETs.
Both MOSFETs can be used in high-side and low-side switching applications, allowing efficient current flow control in various electronic circuits.
Manufacturer
Application
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Versand
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Versandgebührenreferenz (DHL/FedEx):
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von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
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Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.
Zahlungen
Payment Methods
Die Zahlungsfrist ist 100% Prepaid.
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