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NVH040N65S3F
SF3 FRFET AUTO 40MOHM TO-247
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- Fr. Teil #NVH040N65S3F
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- Datenblatt NVH040N65S3F DataSheet
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Spezifikationen
| Series | SuperFET® III |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 65A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 32.5A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 2.1mA |
| Gate Charge (Qg) (Max) @ Vgs | 153 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 5875 pF @ 400 V |
| Power Dissipation (Max) | 446W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-3 |
| Package / Case | TO-247-3 |
Übersicht
Description
Key specifications include low on-resistance, which enhances efficiency by reducing power loss during operation. The device is optimized for high-speed switching, improving performance in hard-switching applications. Its rugged design provides reliable operation in harsh environments.
The NVH040N65S3F is packaged in a TO-247 format, facilitating effective thermal management and easy integration into circuit designs. Overall, its combination of high voltage capability, efficient performance, and robust construction makes it a versatile choice for engineers in the power electronics field.
Features
1. Voltage Rating: 650V, suitable for high-voltage applications.
2. Continuous Drain Current: 40A, allowing substantial power handling.
3. Low On-Resistance (Rds(on)): Typically around 0.04Ω, which enhances efficiency by reducing power losses during operation.
4. Gate Threshold Voltage (Vgs(th)): Low threshold voltage for enhanced switching capabilities.
5. Fast Switching Speed: Reduces switching losses, making it ideal for high-frequency applications.
6. Robust Package: Available in a TO-247 or other packages for effective thermal management.
7. High Avalanche Rating: Enables reliable operation in adverse conditions.
8. Parasitic Capacitance: Optimized for low gate charge, improving overall efficiency.
9. Applications: Suitable for power converters, motor drives, and industrial equipment.
This MOSFET is ideal for applications requiring high efficiency and reliable performance in demanding environments.
Package
Pinout
1. Gate (G) - Controls the MOSFET's switching.
2. Drain (D) - The terminal where the load is connected.
3. Source (S) - The terminal connected to the ground or negative side of the circuit.
4. Tab - Often used for heat dissipation and may be connected to the source.
This device is designed for high-efficiency applications in power electronics, particularly in switching power supplies and motor drives, operating at a maximum voltage of 650V and a continuous drain current up to 40A. The NVH040N65S3F aims to provide low on-resistance and fast switching capabilities, making it suitable for demanding applications.
Manufacturer
Application
Equivalent
Versand
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Zahlungen
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Die Zahlungsfrist ist 100% Prepaid.
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3. Überweisung
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