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NVMFS5113PLWFT1G
MOSFET P-CH 60V 10A/64A 5DFN
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Spezifikationen
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta), 64A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 17A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 83 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 4400 pF @ 25 V |
| Power Dissipation (Max) | 3.8W (Ta), 150W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Base Product Number | NVMFS5113 |
Übersicht
Description
Key features include a low on-resistance (R_DS(on)) for reduced conduction losses, high-speed switching for improved efficiency, and a maximum drain-source voltage (V_DS) rating that supports a variety of voltage applications. The device typically comes in a compact surface-mount package, making it suitable for space-constrained designs.
Due to its robustness and efficiency, the NVMFS5113PLWFT1G is often utilized in consumer electronics, automotive systems, and industrial applications, where reliable performance is critical. When selecting this MOSFET, consider parameters such as gate threshold voltage, thermal resistance, and package type to ensure compatibility with your specific application requirements.
Features
1. Voltage Rating: It can handle a maximum drain-source voltage (Vds) of 30V.
2. Current Rating: The device supports continuous drain current (Id) of up to 12A, making it suitable for various power management tasks.
3. RDS(on): The on-resistance is low (approximately 10 mΩ at 10V), which helps reduce power loss and improve efficiency.
4. Gate Threshold Voltage (Vgs): It has a low threshold voltage, typically between 1V to 2.5V, enabling it to be driven effectively by low-voltage control signals.
5. Package Type: It comes in a compact SOT-223 package, ensuring space efficiency in circuit designs.
6. Fast Switching Speed: The MOSFET is optimized for fast switching applications, making it suitable for use in DC-DC converters, motor drivers, and other power management systems.
These features make the NVMFS5113PLWFT1G an excellent choice for designers seeking reliable and efficient components for power electronics applications.
Package
Pinout
Pin Functions:
1. Gate (G): Controls the MOSFET switching.
2. Drain (D): Collects current; the output of the device.
3. Source (S): Supplies current; the input of the device.
4. Body Diode: Integrated intrinsic diode allowing current flow in reverse direction.
This component features low on-resistance and fast switching capabilities, making it suitable for various power applications. It is housed in a compact surface-mount package, facilitating easy integration into circuit designs.
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Application
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Zahlungen
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