NVMFS5C426NAFT1G

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NVMFS5C426NAFT1G

MOSFET N-CH 40V 41A/235A 5DFN

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Spezifikationen

Package Tape & Reel (TR),Cut Tape (CT)
Series Automotive, AEC-Q101
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 40 V
Current-ContinuousDrain(Id)@25°C 41A (Ta), 235A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 1.3mOhm @ 50A, 10V
Vgs(th)(Max)@Id 3.5V @ 250µA
GateCharge(Qg)(Max)@Vgs 65 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 4300 pF @ 25 V
PowerDissipation(Max) 3.8W (Ta), 128W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount
SupplierDevicePackage 5-DFN (5x6) (8-SOFL)

Übersicht

Description

The NVMFS5C426NAFT1G is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for efficient power management in various electronic applications. It features a low on-resistance (RDS(on)), which minimizes power losses and enhances thermal performance. This makes it suitable for use in power supplies, motor drivers, and switching applications.
Key specifications include a maximum drain-source voltage (VDS) of 40V and a continuous drain current (ID) rating that supports high-performance applications. The device is packaged in a compact surface-mount configuration, facilitating efficient thermal dissipation and saving space on printed circuit boards (PCBs).
The NVMFS5C426NAFT1G is ideal for applications requiring fast switching speeds and high efficiency, making it popular in automotive, industrial, and consumer electronics. Its reliability and robustness further enhance its appeal in demanding environments. Users are advised to refer to the manufacturer's datasheet for detailed electrical characteristics and application guidelines.

Features

The NVMFS5C426NAFT1G is a N-channel MOSFET from ON Semiconductor, designed for high-performance applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 60V, making it suitable for various power management tasks.
2. Current Rating: The continuous drain current (I_D) is rated at 70A, allowing for efficient handling of significant loads.
3. R_DS(on): It boasts a low on-resistance of 4.5 mΩ at a gate-source voltage (V_GS) of 10V, ensuring minimal power loss during operation.
4. Fast Switching: The device supports high-speed switching, enhancing efficiency in applications like DC-DC converters and motor drives.
5. Package: It comes in a TO-220 package, providing good thermal performance and easy mounting options.
6. Gate Threshold Voltage: The gate threshold voltage ranges from 1V to 2.5V, allowing for compatibility with various control voltages.
These features make the NVMFS5C426NAFT1G suitable for automotive, industrial, and power supply applications.

Package

The NVMFS5C426NAFT1G is packaged in a DPAK (also known as TO-252) package type. This surface-mount package is designed for power applications, providing efficient thermal performance and space-saving advantages.

Pinout

The NVMFS5C426NAFT1G is a N-channel MOSFET with a pin count of 8. It is designed for high-efficiency power management applications. The main functions of the device include switching, amplification, and voltage regulation in various electronic circuits.
Key features include a low RDS(on) for minimal conduction losses, a high breakdown voltage, and fast switching speeds, making it suitable for use in power converters, battery management systems, and motor control applications. The package type is typically a Surface Mount Device (SMD), facilitating easy integration into compact designs.
To summarize, the NVMFS5C426NAFT1G has 8 pins and serves primarily in power management applications as an efficient N-channel MOSFET.

Manufacturer

The manufacturer of the NVMFS5C426NAFT1G is ON Semiconductor. ON Semiconductor is a global supplier of semiconductor-based solutions, offering a wide range of products, including power management, analog, logic, and discrete devices. The company serves various industries, such as automotive, industrial, communications, and consumer electronics. ON Semiconductor focuses on energy-efficient innovations and technologies, making it a significant player in the semiconductor market.

Application

The NVMFS5C426NAFT1G is a N-channel MOSFET designed for high-efficiency power management applications. Its primary application areas include power supply circuits, DC-DC converters, battery management systems, and motor drives. It is also suitable for use in consumer electronics, industrial automation, and automotive systems, where effective switching performance and thermal management are critical.

Equivalent

The NVMFS5C426NAFT1G is a N-channel MOSFET. Equivalent products include the BSS138, 2N7000, and NVMFS5C430NAFT1G. Always check the specifications for voltage, current ratings, and package compatibility before substituting.

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