NVMFS5C430NLAFT1G

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NVMFS5C430NLAFT1G

MOSFET N-CH 40V 38A/200A 5DFN

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Spezifikationen

Package Tape & Reel (TR),Cut Tape (CT)
Series Automotive, AEC-Q101
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 40 V
Current-ContinuousDrain(Id)@25°C 38A (Ta), 200A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 1.4mOhm @ 50A, 10V
Vgs(th)(Max)@Id 2V @ 250µA
GateCharge(Qg)(Max)@Vgs 70 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 4300 pF @ 20 V
PowerDissipation(Max) 3.8W (Ta), 110W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount
SupplierDevicePackage 5-DFN (5x6) (8-SOFL)

Übersicht

Description

The NVMFS5C430NLAFT1G is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency power management applications. It features low on-resistance (RDS(on)), which minimizes conduction losses, making it suitable for use in power supplies, motor drives, and DC-DC converters. This component is characterized by a maximum drain-source voltage (VDS) of 30V and a continuous drain current (ID) rating of up to 40A, depending on the thermal conditions.
The device is housed in a compact surface-mount package, facilitating easy integration into various electronic circuits. Its fast switching capabilities help improve system performance and efficiency. The NVMFS5C430NLAFT1G is commonly used in applications where space and thermal management are critical. Key features include robust avalanche ratings and a high level of reliability, making it an excellent choice for both consumer and industrial applications.

Features

The NVMFS5C430NLAFT1G is a N-channel MOSFET designed for efficient switching applications. Key features include:
1. Voltage Rating: With a drain-source voltage (V_DS) of 30V, it is suitable for various low-voltage applications.
2. Current Rating: It can handle a continuous drain current (I_D) of up to 40A, making it capable of driving substantial loads.
3. On-Resistance: The MOSFET exhibits a low on-resistance (R_DS(on)), typically around 5.4 mΩ at V_GS = 10V, which minimizes power losses.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is relatively low, allowing for efficient operation with lower drive voltages.
5. Package: It comes in a compact TO-220 package, facilitating easy heat dissipation and mounting on PCBs.
6. Fast Switching: The device is optimized for fast switching speeds, making it suitable for applications such as power management and motor control.
Overall, the NVMFS5C430NLAFT1G is an efficient choice for power electronic circuits requiring reliable performance in a compact form factor.

Package

The NVMFS5C430NLAFT1G is packaged in a surface mount Dual Flat No-lead (DFN) package type. It features a compact design suitable for high-efficiency applications, offering improved thermal performance and a smaller footprint.

Pinout

The NVMFS5C430NLAFT1G is a power MOSFET from ON Semiconductor, specifically designed for high-efficiency applications. It features a total of 8 pins.
The primary functions of the pins are as follows:
1. Gate (G): Controls the MOSFET operation (turning it on/off).
2. Drain (D): The terminal through which the load current flows when the device is on.
3. Source (S): The terminal connected to ground or the negative side of the power supply.
The pin configuration typically includes additional pins for thermal dissipation and performance enhancements, such as connection to a heatsink or PCB ground. The device is optimized for low R_DS(on), ensuring minimal conduction losses.
For detailed pin assignments and specific functions, please refer to the manufacturer's datasheet.

Manufacturer

The manufacturer of the NVMFS5C430NLAFT1G is ON Semiconductor. ON Semiconductor is a global semiconductor company that designs and manufactures a wide range of semiconductor components, including power management, analog, and digital devices. The company serves various industries such as automotive, industrial, communications, and consumer electronics. With a focus on energy-efficient solutions and innovation, ON Semiconductor plays a significant role in enabling technologies like electric vehicles, IoT, and automation.

Application

The NVMFS5C430NLAFT1G is a N-channel MOSFET primarily used in power management applications. Its application areas include switch mode power supplies (SMPS), DC-DC converters, motor control, and lighting control circuits. It is suitable for high-efficiency, low-voltage, and high-speed switching applications in consumer electronics, automotive, and industrial sectors.

Equivalent

The NVMFS5C430NLAFT1G is a N-channel MOSFET. Equivalent products include the STP30NF10, IRF3205, and BSS138. When seeking alternatives, ensure the specifications (voltage, current ratings, RDS(on), package type) match your requirements. Always consult manufacturer datasheets for precise comparisons.

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