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NVMFS5C442NAFT1G
MOSFET N-CH 40V 29A/140A 5DFN
- Hersteller
- Fr. Teil #NVMFS5C442NAFT1G
- Paket 8-PowerTDFN,5Leads
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Spezifikationen
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | Automotive, AEC-Q101 |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 40 V |
| Current-ContinuousDrain(Id)@25°C | 29A (Ta), 140A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 2.3mOhm @ 50A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 32 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 2100 pF @ 25 V |
| PowerDissipation(Max) | 3.7W (Ta), 83W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 5-DFN (5x6) (8-SOFL) |
Übersicht
Description
Key specifications include a low threshold voltage, enabling it to switch on quickly with minimal gate drive voltage. The MOSFET is often utilized in automotive, industrial, and consumer electronics applications where reliability and performance are critical.
Overall, the NVMFS5C442NAFT1G is a versatile component that supports various applications requiring efficient power handling and control.
Features
- Voltage Rating: 40V maximum drain-source voltage (V_DS)
- Current Rating: Capable of handling continuous drain current up to 68A, making it suitable for power management applications.
- R_DS(on): Low on-resistance of 5.2 mΩ at V_GS = 10V, which minimizes conduction losses.
- Gate Threshold Voltage (V_GS(th)): Typically ranges from 1V to 2V, allowing for easy drive with low voltage logic.
- Package Type: Offered in a compact DPAK package for efficient thermal management and space-saving in designs.
- Applications: Ideal for DC-DC converters, motor drives, and other power switching applications due to its fast switching speed and low thermal resistance.
This MOSFET provides a combination of high efficiency, robustness, and versatility for modern electronic designs.
Package
Pinout
The pins of the NVMFS5C442NAFT1G are typically configured as follows:
1. Gate (G) - Controls the switching of the MOSFET.
2. Drain (D) - The output terminal where the current flows out when the device is on.
3. Source (S) - The input terminal where the current flows in when the device is on.
4. Base (if applicable) - Depending on the specific configuration, this may refer to a connection point in certain applications.
5. Substrate (if applicable) - This connects to the device's internal structure for better thermal dissipation.
For specific applications and detailed specifications, refer to the manufacturer's datasheet.
Manufacturer
Application
Equivalent
Versand
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Versandgebührenreferenz (DHL/FedEx):
DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.
von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.
Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.
Zahlungen
Payment Methods
Die Zahlungsfrist ist 100% Prepaid.
Derzeit akzeptieren wir nur die folgenden Zahlungsmethoden:
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2. Kredit- / Debitkarte
3. Überweisung
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