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NVMTS1D6N10MCTXG
PTNG 100V SINGLE NCH PQFN8X8 STD
- Hersteller
- Fr. Teil #NVMTS1D6N10MCTXG
- Paket
- Datenblatt NVMTS1D6N10MCTXG DataSheet
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Spezifikationen
| Supplier | onsemi |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | Automotive, AEC-Q101 |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 36A (Ta), 273A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 1.7mOhm @ 90A, 10V |
| Vgs(th)(Max)@Id | 4V @ 650µA |
| GateCharge(Qg)(Max)@Vgs | 106 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 7630 pF @ 50 V |
| PowerDissipation(Max) | 5W (Ta), 291W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 8-DFNW (8.3x8.4) |
Übersicht
Description
Key features typically include high-speed read and write operations, low power consumption, and robust data retention capabilities. The "1D" in the name often signifies a specific configuration or feature set, while "6N10" may refer to the storage density or architecture type, and "MCTXG" can denote package type and temperature grade.
Overall, the NVMTS1D6N10MCTXG is optimized for reliability and efficiency, making it suitable for a wide range of applications where quick access to stored data is crucial.
Features
1. Voltage Rating: Typically supports a drain-source voltage (V_DS) of around 60V, making it suitable for moderate voltage applications.
2. Current Handling: Capable of handling continuous drain currents (I_D) up to approximately 10A, depending on thermal management conditions.
3. On-Resistance: Features low on-resistance (R_DS(on)), which minimizes power loss during operation, enhancing efficiency.
4. Gate Threshold Voltage: Optimized gate threshold voltage (V_GS(th)) allows for operation in low-voltage circuits.
5. Package Type: Usually available in compact surface-mount packages, facilitating easy integration into PCB designs.
These attributes make the NVMTS1D6N10MCTXG suitable for applications in power supply circuits, motor drives, and general-purpose switching applications. Always refer to the specific datasheet for exact specifications and thermal characteristics.
Package
Pinout
### Pin Functions:
1. Gate (G): Controls the on/off state of the MOSFET.
2. Drain (D): Connected to the load; the output where current flows when the device is on.
3. Source (S): Ground reference for the device; current flows into the source when the MOSFET is on.
4. Body Diode: Integrated, allows current to flow from drain to source when the MOSFET is off.
5. Thermal Pad: Used for heat dissipation, typically connected to ground.
This MOSFET is characterized by low on-resistance and high-speed switching capabilities, making it suitable for applications such as power supplies, motor drivers, and other switching applications.
Manufacturer
Application
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Zahlungen
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