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NVMTS4D3N15MC
SINGLE N-CHANNEL POWER MOSFET 00
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- Fr. Teil #NVMTS4D3N15MC
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Spezifikationen
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 150 V |
| Current - Continuous Drain (Id) @ 25°C | 21A (Ta), 165A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 4.45mOhm @ 95A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 521µA |
| Gate Charge (Qg) (Max) @ Vgs | 79 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 6514 pF @ 75 V |
| Power Dissipation (Max) | 5W (Ta), 292W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-DFNW (8.3x8.4) |
| Package / Case | 8-PowerTDFN |
Übersicht
Description
The "T" in the designation may indicate a specific technology or feature set, while the numerical portion could represent its capacity, performance metrics, or particular use-case specifications.
While the exact characteristics of NVMTS4D3N15MC are not available in standard references, similar models typically feature rapid read/write speeds, durability, and low power consumption, suitable for high-performance computing and data-intensive applications. For in-depth technical specifications, consulting the manufacturer's datasheet or product documentation is recommended.
Features
1. Capacity: Offers substantial storage capacity, suitable for data-intensive applications.
2. Speed: High data transfer rates ensure fast access and improved performance.
3. Low Power Consumption: Designed for energy efficiency, making it ideal for mobile and battery-powered devices.
4. Durability: Built to withstand various environmental conditions, enhancing reliability.
5. Compatibility: Supports standard interfaces, ensuring easy integration into existing systems.
6. Advanced Technology: Utilizes cutting-edge memory technology for optimal performance and longevity.
7. Scalability: Easily scalable to meet growing storage demands.
Overall, the NVMTS4D3N15MC is engineered for efficiency and performance, making it a suitable choice for modern computing needs.
Package
Pinout
The pins typically include:
1. Gate (G) - Controls the on/off state of the MOSFET.
2. Drain (D) - The terminal through which the load current flows when the MOSFET is turned on.
3. Source (S) - The terminal that connects to the ground or negative supply for the load.
Additional pins may be designated for various configurations and gate drive connections. For detailed pin assignments and electrical characteristics, refer to the manufacturer’s datasheet. This device is characterized by its low on-resistance and high-speed switching capabilities, making it suitable for applications requiring efficient power handling.
Manufacturer
Application
Equivalent
Versand
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bieten Sie globale Versanddienstleistungen durch DHL, FedEx, TNT, UPS oder einen anderen Spediteur Ihrer Wahl.
Versandgebührenreferenz (DHL/FedEx):
DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.
von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.
Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.
Zahlungen
Payment Methods
Die Zahlungsfrist ist 100% Prepaid.
Derzeit akzeptieren wir nur die folgenden Zahlungsmethoden:
1. PayPal
2. Kredit- / Debitkarte
3. Überweisung
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