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NVTFS003N04CTAG
MOSFET N-CH 40V 22A/103A 8WDFN
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Spezifikationen
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V |
| Current - Continuous Drain (Id) @ 25°C | 22A (Ta), 103A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 3.5mOhm @ 50A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 60µA |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1600 pF @ 25 V |
| Power Dissipation (Max) | 3.2W (Ta), 69W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-WDFN (3.3x3.3) |
| Package / Case | 8-PowerWDFN |
| Base Product Number | NVTFS003 |
Übersicht
Description
This memory technology is commonly used in applications ranging from consumer electronics to industrial systems, where fast data access and long-term data retention are crucial. NVTFS003N04CTAG may also include specific features like wear leveling, error correction, and power loss protection to ensure data integrity and longevity.
For detailed specifications, applications, and performance characteristics, consulting the manufacturer's datasheet or technical documentation is recommended.
Features
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 40V, making it suitable for various power management applications.
2. Current Rating: The device can handle continuous drain currents up to 3A, facilitating its use in switching and linear applications.
3. Low R_DS(on): It offers a low on-resistance (R_DS(on)) value, which minimizes conduction losses and enhances efficiency.
4. Fast Switching Speed: The MOSFET is optimized for rapid switching, making it ideal for high-frequency applications.
5. Thermal Performance: It has a robust thermal performance, suitable for operation in various environmental conditions.
6. TO-220 Package: The device comes in a TO-220 package, allowing for easier heat dissipation and PCB integration.
These features make the NVTFS003N04CTAG suitable for applications in power supplies, motor drives, and other electronic circuits where efficiency and reliability are crucial.
Package
Pinout
1. Gate (G): Controls the switching of the MOSFET.
2. Drain (D): The terminal through which the current flows out of the MOSFET.
3. Source (S): The terminal through which the current enters the MOSFET.
4. Body Diode: This is an intrinsic diode formed between the drain and source.
The device is commonly used in power management, DC-DC converters, and other applications where efficient switching is required. It features low on-resistance and fast switching capabilities, making it suitable for high-efficiency applications. Always refer to the specific datasheet for detailed pin assignments and electrical characteristics.
Manufacturer
Application
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Zahlungen
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