PSMN2R4-30MLDX

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PSMN2R4-30MLDX

MOSFET N-CH 30V 70A LFPAK33

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Spezifikationen

Supplier Nexperia USA Inc.
Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 30 V
Current-ContinuousDrain(Id)@25°C 70A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 2.4mOhm @ 25A, 10V
Vgs(th)(Max)@Id 2.2V @ 1mA
GateCharge(Qg)(Max)@Vgs 51 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 3264 pF @ 15 V
PowerDissipation(Max) 91W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount
SupplierDevicePackage LFPAK33

Übersicht

Description

PSMN2R4-30MLDX is a 30 V N-channel trench MOSFET from STMicroelectronics (PSMN2R4 family). It delivers very low conduction losses with a typical Rds(on) around 2.4 mΩ (max ~3 mΩ at Vgs = 10 V), enabling high-efficiency switching in DC-DC converters, motor drives, and power switches. The device offers high pulsed current capability, fast switching, and ruggedness (including robust avalanche performance) over a wide operating temp range (-55°C to 150°C). The MLDX suffix indicates a compact surface-mount package designed for good thermal performance. Gate drive is compatible with standard 10 V levels. Ideal for synchronous buck regulators, inverters, and other high-efficiency power applications. For exact electrical ratings, thermal data, and package details, consult the official STMicroelectronics datasheet.

Features

PSMN2R4-30MLDX features (concise):
- N-channel MOSFET with 30 V VDS
- RDS(on) ≈ 2.4 mΩ (typ) at VGS = 10 V
- Trench MOSFET technology for low conduction losses
- Low gate charge and capacitance for fast switching
- Suitable for high-efficiency synchronous buck converters, point-of-load, and motor drive applications
- Robust electrical performance with avalanche capability for load-dump/short-circuit tolerance
- Pb-free, halogen-free, in the compact MLDX package (low-profile, thermally efficient)
Note: exact Id rating and package details may vary; consult the datasheet for complete specifications.

Package

I don’t have a definitive match for "PSMN2R4-30MLDX." Please provide the manufacturer or a datasheet link (or confirm the exact part spelling). With that I can quickly tell you the exact package type (e.g., TO-220, DPAK, LFPAK, SO-8, etc.).

Pinout

PSMN2R4-30MLDX is a power N‑channel MOSFET in a 3‑pin package with an exposed drain tab (electrically the tab is the drain). Pins: Gate, Drain (tab), Source. Function: low‑voltage, low‑RDS(on) power switch (≈2.4 mΩ RDS(on), 30 V device) used for high‑current switching, synchronous rectification, DC‑DC converters and general power‑management applications.

Manufacturer

Manufacturer: STMicroelectronics.
Type of company: STMicroelectronics is a global, publicly traded semiconductor company (headquartered in Geneva, Switzerland) that designs, develops and manufactures a broad range of semiconductor products — including power MOSFETs, analog and mixed-signal ICs, microcontrollers, sensors and discrete devices.

Application

Applications of PSMN2R4-30MLDX include:
- High-efficiency switching in DC-DC converters and buck/boost regulators
- Motor drive circuits (BLDC/stepper)
- Automotive and industrial power electronics (inverters, load switches)
- Solar inverters, UPS, and energy-storage systems
- General power-switching and distribution in consumer, telecom, and embedded electronics

Equivalent

True equivalents are 30 V N‑channel power MOSFETs with RDS(on) ≈2.4 mΩ in the same package and similar gate/charge specs. Look for parts from Infineon (OptiMOS family), Vishay (SiR family), Rohm or ON Semiconductor with VDS=30 V, RDS(on)≈2.4 mΩ and matching package/thermal data. Verify pinout, Qg and SOA on datasheets or use Digi‑Key/Mouser/ST cross‑reference to confirm exact drop‑in compatibility.

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