RFD14N05L

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RFD14N05L

MOSFET N-CH 50V 14A IPAK

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Spezifikationen

Package Tube
ProductStatus Obsolete
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 50 V
Current-ContinuousDrain(Id)@25°C 14A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 5V
RdsOn(Max)@IdVgs 100mOhm @ 14A, 5V
Vgs(th)(Max)@Id 2V @ 250µA
GateCharge(Qg)(Max)@Vgs 40 nC @ 10 V
Vgs(Max) ±10V
InputCapacitance(Ciss)(Max)@Vds 670 pF @ 25 V
PowerDissipation(Max) 48W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage I-PAK

Übersicht

Description

The RFD14N05L is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power applications. It features a maximum drain-source voltage (Vds) of 50V and a continuous drain current (Id) rating of 14A. This device is notable for its low on-resistance (Rds(on)), which minimizes power loss during operation, making it suitable for switching applications in power management, converters, and motor drives.
Key specifications include a gate threshold voltage (Vgs(th)) typically between 1V and 3V, ensuring efficient operation with low gate drive requirements. The RFD14N05L is often packaged in TO-220 for better heat dissipation, enhancing its performance in high-temperature environments.
Overall, the RFD14N05L is ideal for applications that require efficient switching and high current handling, such as in power supplies, automotive systems, and various electronic circuits. Its reliability and performance make it a popular choice among engineers and designers in the semiconductor industry.

Features

The RFD14N05L is an N-channel MOSFET designed for low-voltage and high-current applications. Key features include:
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 50V, making it suitable for various power electronics applications.
2. Current Rating: Continuous drain current (I_D) up to 14A, allowing it to handle significant loads.
3. On-Resistance: Low R_DS(on) typically around 0.014 ohms, which reduces power loss and improves efficiency.
4. Gate Threshold Voltage: Low gate threshold voltage (V_GS(th)) typically between 1.0V to 2.5V, allowing it to be driven by lower voltage logic levels.
5. Package Type: Available in a compact SOT-223 package for space-saving designs.
6. Thermal Performance: Adequate thermal resistance, enabling effective heat dissipation in high-power applications.
7. Fast Switching Speed: Suitable for high-frequency applications due to its fast switching characteristics.
Overall, the RFD14N05L is ideal for use in DC-DC converters, motor control, and other power management solutions.

Package

The RFD14N05L is typically available in a TO-220 package. This package type is designed for power handling applications, offering good thermal performance and ease of mounting on heatsinks.

Pinout

The RFD14N05L is an N-channel MOSFET with a total of 3 pins. The pin functions are as follows:
1. Gate (G): This pin controls the MOSFET's operation by applying a voltage to turn it on or off.
2. Drain (D): This pin is the output where the current flows out when the MOSFET is in the ON state.
3. Source (S): This pin is the input where the current enters the MOSFET and is typically connected to ground in low-side switching applications.
The RFD14N05L is designed for low-voltage applications and features low on-resistance, making it suitable for switching and amplifying signals in power management, motor control, and other electronic circuits.

Manufacturer

The RFD14N05L is manufactured by ON Semiconductor, a global supplier of semiconductor-based solutions. ON Semiconductor specializes in designing and manufacturing a wide range of semiconductor components, including power management, analog, logic, and discrete devices. The company focuses on providing energy-efficient products for various applications, including automotive, industrial, and consumer electronics. ON Semiconductor is recognized for its commitment to innovation and sustainability within the semiconductor industry.

Application

The RFD14N05L is a N-channel MOSFET primarily used in applications such as power management, motor control, LED drivers, and switching power supplies. It is suitable for low-voltage, high-efficiency circuits in consumer electronics, automotive systems, and industrial automation. Its ability to handle high current levels and low on-resistance makes it ideal for these applications.

Equivalent

The RFD14N05L is an N-channel MOSFET. Equivalent products include the IRF140, STP14NF06, and FQP14N06L. Always verify specifications like V_DS, I_D, and R_DS(on) to ensure compatibility for your specific application.

Versand

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Versandgebührenreferenz (DHL/FedEx):

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UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.

EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.

Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.

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