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RFD3055LESM9A
MOSFET N-CH 60V 11A TO252AA
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Spezifikationen
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Rds On (Max) @ Id, Vgs | 107mOhm @ 8A, 5V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 11.3 nC @ 10 V |
| Vgs (Max) | ±16V |
| Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 25 V |
| Power Dissipation (Max) | 38W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-252AA |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Base Product Number | RFD3055 |
Übersicht
Description
The amplifier boasts a high gain and efficiency, ensuring effective signal amplification with reduced power loss. It typically supports various modulation schemes and can handle diverse input signals, making it versatile for different RF applications.
Additionally, the RFD3055LESM9A is designed for robust thermal performance, ensuring reliable operation under varying environmental conditions. Its design often incorporates built-in protection features against over-voltage and over-temperature scenarios, enhancing durability. Overall, this RF amplifier is a critical component for enhancing signal strength and maintaining quality in RF communication systems.
Features
1. Frequency Range: Operates efficiently within a wide frequency range, typically from 30 MHz to 512 MHz.
2. Power Output: Capable of delivering high output power, making it suitable for demanding applications.
3. Gain: Provides high power gain, ensuring effective signal amplification.
4. Efficiency: Designed for high-efficiency operation, helping to reduce energy consumption and thermal output.
5. Package Type: Available in a robust surface-mount package, facilitating easier integration into circuits and improving thermal performance.
6. Versatility: Suitable for a variety of RF applications, including amplifiers, transmitters, and other communication devices.
This transistor is known for its reliability and performance in high-demand scenarios, making it a preferred choice among engineers and designers in the RF domain.
Package
Pinout
1. Gate (G) - This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow from the drain to the source.
2. Drain (D) - This pin is the output terminal where the current flows out when the MOSFET is turned on.
3. Source (S) - This pin is the input terminal where the current flows in when the MOSFET is activated.
The RFD3055LESM9A is designed for applications such as power management and switching in various electronic circuits, providing efficient control over high current loads. Its characteristics include low on-resistance and high-speed switching capabilities, making it suitable for power supply applications.
Manufacturer
Application
Equivalent
Versand
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bieten Sie globale Versanddienstleistungen durch DHL, FedEx, TNT, UPS oder einen anderen Spediteur Ihrer Wahl.
Versandgebührenreferenz (DHL/FedEx):
DHL: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 2-5 Werktagen.
von FedEx: Versandkosten reichen von $25-$40 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
UPS: Versandkosten reichen von $25-$45 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
TNT: Versandkosten reichen von $25-$65 (0.5kg), mit einer geschätzten Lieferzeit von 3-7 Werktagen.
EMS: Versandkosten reichen von $30-$50 (0.5kg), mit einer geschätzten Lieferzeit von 7-15 Werktagen.
Registrierte Luftpost: Versandkosten sind $ 2- $ 4 (0,1 kg), mit einer geschätzten Lieferzeit von 5-20 Werktagen.
Zahlungen
Payment Methods
Die Zahlungsfrist ist 100% Prepaid.
Derzeit akzeptieren wir nur die folgenden Zahlungsmethoden:
1. PayPal
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3. Überweisung
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